FPD2250

更新时间： 2024-01-22 08:06:39

品牌	Logo	应用领域
FILTRONIC		晶体晶体管放大器
页数	文件大小	规格书
2页	184K
描述
1.5W POWER PHEMT

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中文翻译

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技术参数
数据手册

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FPD2250 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

FPD2250 数据手册

FPD2250

1.5W POWER PHEMT

DRAIN

BOND

• FEATURES

PAD (2X)

♦ 32 dBm Linear Output Power at 12 GHz

♦ 7.5 dB Power Gain at 12 GHz

♦ 42 dBm Output IP3

SOURCE

BOND

PAD (2x)

♦ 45% Power-Added Efficiency

GATE

BOND

PAD (2X)

DIE SIZE (µm):: 680 x 470

DIE THICKNESS: 75 µm

BONDING PADS (µm): > 85 x 60

• DESCRIPTION AND APPLICATIONS

The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),

featuring a 0.25 µm by 2250 µm Schottky barrier gate, defined by high-resolution stepper-based

photolithography. The recessed and offset Gate structure minimizes parasitics to optimize

performance. The epitaxial structure and processing have been optimized for reliable high-power

applications. The FPD2250 also features Si₃N₄passivation and is available in a P100 flanged

ceramic package and in the low cost plastic SOT89 plastic package.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Maximum Stable Gain (S₂₁/S₁₂)

Power Gain at P_1dB

P_1dB

MSG

G_1dB

PAE

V_DS= 8 V; I_DS= 50% I_DSS

31.0

8.0

6.5

32.0

9.0

7.5

dBm

Power-Added Efficiency

_DS= 8 V; I_DS= 50% I_DSS

;

_OUT= P_1dB

Output Third-Order Intercept Point

IP3

V_DS= 8 V; I_DS= 50% I_DSS

Matched for optimal power

Tuned for best IP3

(from 15 to 5 dB below P_1dB

)

dBm

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -5 V

V_DS= 1.3 V; I_DS= 2.25 mA

I_GS= 2.25 mA

560

700

1125

600

825

µA

1.0

|V_BDGS

|V_BDGD

12.0

14.5

14.0

16.0

I_GD= 2.25 mA

_DS> 6V

θ_JC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/17/04

Email: sales@filcsi.com

中文翻译

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与FPD2250相关器件

型号	品牌	获取价格	描述	数据表
FPD2250_1	FILTRONIC	获取价格	1.5W POWER PHEMT
FPD2250-000	RFMD	获取价格	1.5W POWER pHEMT
FPD2250-000S3	RFMD	获取价格	1.5W POWER pHEMT
FPD2250-000SQ	RFMD	获取价格	1.5W POWER pHEMT
FPD2250DFN	FILTRONIC	获取价格	LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FPD2250SOT89	FILTRONIC	获取价格	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
FPD2250SOT89_1	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD2250SOT89CE	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD2250SOT89E	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD3000	FILTRONIC	获取价格	2W POWER PHEMT

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