FPD22501.5W
Power pHEMT
FPD2250
1.5W POWER pHEMT
Package Style: Bare Die
Product Description
Features
The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx2250μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD2250 is also available
in the low-cost plastic SOT89 package.
32dBm Linear Output Power
at 12GHz
7.5dB Power Gain at 12GHz
42dBm O
IP3
45% Power-Added Efficiency
Applications
Optimum Technology
Matching® Applied
Narrowband and Broadband
High-Performance Amplifiers
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
GaAs pHEMT
9
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Electrical Specifications
P
Gain Compression
31.0
8.0
32.0
9.0
7.5
dBm
dB
V
V
V
V
V
=8V, I =50% I
DS
1dB
DS
DS
DS
DS
DS
DSS
DSS
DSS
Maximum Stable Gain (S21/S12)
Power Gain at P (G
=8V, I =50% I
DS
)
6.5
dB
=8V, I =50% I
DS
1dB 1dB
Power-Added Efficiency (PAE)
OIP
45
%
=8V, I =50% I , P =P
DS
DSS
OUT
1dB
40
dBm
dBm
mA
mA
=8V, I =50% I
DS
3
DSS
42
Matched for optimal power, tuned for best IP
3
Saturated Drain-Source Current (I
Maximum Drain-Source Current
)
560
700
1125
825
V
V
=1.3V, V =0V
DSS
DS
DS
GS
=1.3V, V ≈+1V
GS
(I
)
MAX
Transconductance (G )
600
10
ms
μA
V
V
V
V
=1.3V, V =0V
M
DS
GS
DS
GS
Gate-Source Leakage Current (I
)
=-5V
GSO
Pinch-Off Voltage (V )
|1.0|
|14.0|
=1.3V, I =2.25mA
DS
P
Gate-Source Breakdown Voltage
(V
|12.0|
|14.5|
V
I
=2.25mA
=2.25mA
>6V
GS
)
BDGS
Gate-Drain Breakdown Voltage
(V
|16.0|
30
V
I
GD
)
BDGD
Thermal Resistivity (θJC)
Note: T
°C/W
V
DS
=22°C, RF specifications measured at f=12GHz using CW signal.
AMBIENT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS090612
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