Datasheet > FPD200

FPD200

更新时间： 2024-01-22 19:50:14

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
2页	186K
描述
GENERAL PURPOSE PHEMT

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技术参数
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FPD200 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

FPD200 数据手册

FPD200

GENERAL PURPOSE PHEMT

DRAIN

BOND

• FEATURES

PAD (1X)

♦ 19 dBm Linear Output Power at 12 GHz

♦ 12 dB Power Gain at 12 GHz

♦ 17 dB Maximum Stable Gain at 12 GHz

♦ 12 dB Maximum Stable Gain at 18 GHz

♦ 45% Power-Added Efficiency

SOURCE

BOND

PAD (2x)

GATE

BOND

PAD (1X)

DIE SIZE (µm): 400 x 400

DIE THICKNESS: 75 µm

BONDING PADS (µm): >80 x 80

• DESCRIPTION AND APPLICATIONS

The FPD200is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),

featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high-resolution stepper-based

photolithography. The recessed and offset Gate structure minimizes parasitics to optimize

performance. The epitaxial structure and processing have been optimized for reliable medium-

power applications. The FPD200 also features Si₃N₄passivation and is available in a low cost

plastic package.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Power Gain at P_1dB

P_1dB

G_1dB

PAE

V_DS= 5 V; I_DS= 50% I_DSS

10.5

12.0

dBm

Power-Added Efficiency

_DS= 5V; I_DS= 50% I_DSS

;

P_OUT= P_1dB

Maximum Stable Gain (S₂₁/S₁₂)

f = 12 GHz

SSG

V_DS= 5 V; I_DS= 50% I_DSS

10.5

f = 24 GHz

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -5 V

V_DS= 1.3 V; I_DS= 0.2 mA

I_GS= 0.2 mA

120

µA

1.3

0.7

12.0

14.5

1.0

14.0

16.0

280

|V_BDGS

|V_BDGD

I_GD= 0.2 mA

_DS> 3V

θ_JC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/17/04

Email: sales@filcsi.com

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