Datasheet > FPD200_1

FPD200_1

更新时间： 2024-09-23 03:37:31

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
4页	253K
描述
GENERAL PURPOSE PHEMT DIE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FPD200_1 数据手册

FPD200

Datasheet v3.0

GENERAL PURPOSE PHEMT DIE

FEATURES:

LAYOUT:

•

19 dBm Output Power (P1dB)

13 dB Power Gain at 12 GHz

17 dB Maximum Stable Gain at 12 GHz

12 dB Maximum Stable Gain at 18 GHz

45% Power-Added Efficiency

GENERAL DESCRIPTION:

The

FPD200

AlGaAs/InGaAs

Mobility

pseudomorphic

High

Electron

Transistor (pHEMT), featuring a 0.25 µm by

200 µm Schottky barrier gate, defined by high-

resolution stepper-based photolithography.

The recessed gate structure minimizes

TYPICAL APPLICATIONS:

•

Narrowband and broadband high-

performance amplifiers

parasitics to optimize performance.

epitaxial structure and processing have been

The

•

SATCOM uplink transmitters

PCS/Cellular low-voltage high-efficiency

output amplifiers

optimized

for

reliable

medium-power

applications.

•

Medium-haul digital radio transmitters

ELECTRICAL SPECIFICATIONS :

PARAMETER

Power at 1dB Gain Compression

Power Gain at P1dB

SYMBOL

P1dB

CONDITIONS

MIN TYP

MAX

UNITS

dBm

VDS = 5 V; IDS = 50% IDSS

G1dB

11.0

13.0

Noise Figure

N.F.min

PAE

VDS = 5 V; IDS = 50% IDSS

1.2

Power-Added Efficiency

VDS = 5V; IDS = 50% IDSS; POUT = P1dB

Maximum Stable Gain (S21/S12)

f = 12 GHz

MSG

VDS = 5 V; IDS = 50% IDSS

f = 24 GHz

10.5

Saturated Drain-Source Current

Maximum Drain-Source Current

IDSS

IMAX

VDS = 1.3 V; VGS = 0 V

120

VDS = 1.3 V; VGS ≅ +1 V

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

IGSO

VDS = 1.3 V; VGS = 0 V

VGS = -5 V

µA

|VP|

VDS = 1.3 V; IDS = 0.2 mA

IGS = 0.2 mA

0.7

1.0

14.0

16.0

280

1.3

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity

|VBDGS|

|VBDGD|

θ_JC

12.0

14.5

IGD = 0.2 mA

VDS > 3V

°C/W

Note: ¹T_Ambient= 22°C; RF specifications measured at f = 12 GHz using CW signal on a sample basis

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

12 3 4

中文翻译

下载PDF

与FPD200_1相关器件

型号	品牌	获取价格	描述	数据表
FPD2000AS	FILTRONIC	获取价格	2W PACKAGED POWER PHEMT
FPD2000AS_1	FILTRONIC	获取价格	2W PACKAGED POWER PHEMT
FPD2000AS-EB	FILTRONIC	获取价格	2W PACKAGED POWER PHEMT
FPD2000V	FILTRONIC	获取价格	2W POWER PHEMT
FPD200P70	FILTRONIC	获取价格	HI-FREQUENCY PACKAGED PHEMT
FPD200P70_1	FILTRONIC	获取价格	HIGH FREQUENCY PACKAGED PHEMT
FPD2080	ETC	获取价格	Optoelectronic
FPD212	ETC	获取价格	Optoelectronic
FPD2120	ETC	获取价格	Optoelectronic
FPD212PG	ETC	获取价格	Optoelectronic