Datasheet v3.0
2W PACKAGED POWER PHEMT
FEATURES:
PACKAGE:
•
•
•
•
•
•
•
33 dBm Output Power (P1dB) @1.8GHz
14 dB Power Gain (G1dB) @1.8GHz
46 dBm Output IP3
10V Operation
50% Power-Added Efficiency
Evaluation Boards Available
Usable Gain to 4GHz
TYPICAL APPLICATIONS:
GENERAL DESCRIPTION:
•
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
Power applications in WLL/WLAN and
WiMax (3.5GHz) amplifiers
The FPD2000AS is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
•
Electron
Mobility
Transistor
(pHEMT),
optimized for power applications in L-Band.
The surface-mount package has been
optimized for low parasitics.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VDS = 10V; IDS = 350 mA
Power at 1dB Gain Compression
P1dB
32
33
dBm
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 350 mA
Power Gain at dB Gain Compression
G1dB
MSG
PAE
12.5
14.0
20
ΓS and ΓL tuned for Optimum IP3
VDS = 10 V; IDS = 350 mA
Maximum Stable Gain
S21/S12
dB
%
PIN = 0dBm, 50Ω system
VDS = 10V; IDS = 350 mA
Power-Added Efficiency
at 1dB Gain Compression
45
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDS = 350 mA
ΓS and ΓL tuned for Optimum IP3
POUT = 22 dBm
3rd-Order Intermodulation Distortion
IM3
-47
dBc
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
IDSS
IMAX
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
1150
1800
1200
35
mA
mA
mS
µA
V
GM
Gate-Source Leakage Current
Pinch-Off Voltage
IGSO
|VP|
85
VDS = 1.3 V; IDS = 4 mA
IGS = 4 mA
0.7
6
0.9
1.4
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance (channel-to-case)
|VBDGS|
|VBDGD|
ΘCC
V
IGD = 4 mA
20
V
See Note on following page
20
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com