FPD1000AS-EB

更新时间： 2024-01-02 08:41:47

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
11页	592K
描述
1W PACKAGED POWER PHEMT

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数据手册

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FPD1000AS-EB 数据手册

FPD1000AS

Datasheet v3.0

1W PACKAGED POWER PHEMT

FEATURES:

PACKAGE

•

31 dBm Output Power (P1dB) @1.8GHz

15 dB Power Gain (G1dB) @ 1.8GHz

43 dBm Output IP3

-42 dBc WCDMA ACPR at 21 dBm PCH

10V Operation

50% Power-Added Efficiency

Evaluation Boards Available

Suitable for applications to 5 GHz

TYPICAL APPLICATIONS:

•

Drivers or output stages in PCS/Cellular

base station transmitter amplifiers

Power applications in WLL/WLAN and

WiMax amplifiers

GENERAL DESCRIPTION:

The FPD1000AS is a packaged depletion

mode AlGaAs/InGaAs pseudomorphic High

•

Electron

Mobility

Transistor

(pHEMT),

optimized for power applications in L-Band.

The surface-mount package has been

optimized for low parasitics.

ELECTRICAL SPECIFICATIONS:

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

VDS = 10V; IDS = 200 mA

Power at 1dB Gain Compression

P1dB

dBm

ΓS and ΓL tuned for Optimum IP3

VDS = 10V; IDS = 200 mA

Power Gain at 1dB Gain Compression

G1dB

MSG

PAE

IM3

13.5

15.0

ΓS and ΓL tuned for Optimum IP3

VDS = 10 V; IDS = 200mA

Maximum Stable Gain

S21/S12

PIN = 0dBm, 50Ω system

VDS = 10V; IDS = 200 mA

Power-Added Efficiency

at 1dB Gain Compression

ΓS and ΓL tuned for Optimum IP3

3rd-Order Intermodulation Distortion

VDS = 10V; IDS = 200 mA

-46

POUT = 19 dBm (single-tone level)

dBc

µA

ΓS and ΓL tuned for Optimum IP3

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

IDSS

IMAX

VDS = 1.3 V; VGS = 0 V

VDS = 1.3 V; VGS ≅ +1 V

VDS = 1.3 V; VGS = 0 V

VGS = -3 V

480

650

1100

720

800

Gate-Source Leakage Current

Pinch-Off Voltage

IGSO

|VP|

VDS = 1.3 V; IDS = 2.4 mA

IGS = 2.4 mA

0.7

0.9

1.4

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistance (channel-to-case)

|VBDGS|

|VBDGD|

Θ_CC

IGD = 2.4 mA

See Note on following page

°C/W

Note: T_AMBIENT= 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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