FPD1050
0.75W Power
pHEMT
FPD1050
0.75W POWER pHEMT
Package Style: Bare Die
Product Description
Features
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx1050μm Schottky barrier gate, defined by high-
resolution stepper-based photolithography. The double recessed gate structure
minimizes parasitics to optimize performance. The epitaxial structure and process-
ing have been optimized for reliable high-power applications. The FPD1050 is also
available in the low-cost plastic SOT89 package.
28.5dBm Linear Output
Power at 12GHz
11dB Power Gain at 12GHz
14dB Max Stable Gain at
12GHz
41 dBm O
IP3
45% Power-Added Efficiency
Optimum Technology
Matching® Applied
Applications
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
GaAs pHEMT
9
Si CMOS
Si BJT
Medium-Haul Digital Radio
Transmitters
GaN HEMT
InP HBT
RF MEMS
LDMOS
Specification
Parameter
Unit
Condition
Min.
27.5
Typ.
28.5
14.0
11.0
45
Max.
P
Gain Compression
dBm
dB
V
V
V
V
V
=8V, I =50% I
DS
1dB
DS
DS
DS
DS
DS
DSS
DSS
DSS
S21/S12 (MSG)
Power Gain at P
PAE
=8V, I =50% I
DS
(G
)
10.0
dB
=8V, I =50% I
DS
1dB 1dB
%
=8V, I =50% I , P =P
DS
DSS
DSS
OUT
1dB
OIP
39
dBm
dBm
mA
=8V, I =50% I
DS
3
41
Matched for optimal power, tuned for best IP
3
Saturated Drain-Source Current
(IDSS)
260
325
385
V
=1.3V, V =0V
DS
GS
Maximum Drain-Source Current
(IMAX)
520
mA
V
=1.3V, V ≈+1V
DS
GS
Transconductance (GM)
280
15
ms
μA
V
V
V
V
=1.3V, V =0V
DS
GS
DS
GS
Gate-Source Leakage Current (IGSO)
=-5V
Pinch-Off Voltage (V )
|1.0|
|14.0|
=1.3V, I =1mA
DS
P
Gate-Source Breakdown Voltage
|12.0|
|14.5|
V
I
=3mA
=3mA
>6V
GS
(V
)
BDGS
Gate-Drain Breakdown Voltage
(V
|16.0|
45
V
I
GD
)
BDGD
Thermal Resistivity (θJC) *
*Note: T
°C/W
V
DS
=22°C, RF specifications measured at f=12GHz using CW signal.
AMBIENT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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