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FPD1050 PDF预览

FPD1050

更新时间: 2024-02-06 12:13:43
品牌 Logo 应用领域
FILTRONIC 晶体晶体管放大器
页数 文件大小 规格书
2页 178K
描述
0.75W POWER PHEMT

FPD1050 技术参数

生命周期:Active包装说明:DIE
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.12Is Samacsys:N
配置:SINGLE最小漏源击穿电压:10 V
FET 技术:HIGH ELECTRON MOBILITY最高频带:X BAND
JESD-30 代码:R-XUUC-N元件数量:1
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP极性/信道类型:N-CHANNEL
功耗环境最大值:3.4 W认证状态:Not Qualified
子类别:FET RF Small Signal表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

FPD1050 数据手册

 浏览型号FPD1050的Datasheet PDF文件第2页 
FPD1050  
0.75W POWER PHEMT  
SOURCE  
BOND  
DRAIN  
FEATURES  
BOND  
PAD (2x)  
28.5 dBm Linear Output Power at 12 GHz  
11 dB Power Gain at 12 GHz  
14 dB Maximum Stable Gain at 12 GHz  
41 dBm Output IP3  
PAD (2X)  
GATE  
BOND  
45% Power-Added Efficiency  
PAD (1X)  
DIE SIZE: 470 x 440 µm  
DIE THICKNESS: 100 µm  
BONDING PADS: >85 x 60 µm  
DESCRIPTION AND APPLICATIONS  
The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT),  
featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based  
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize  
performance. The epitaxial structure and processing have been optimized for reliable high-power  
applications. The FPD750 also features Si3N4 passivation and is also available in a low cost plastic  
SOT89 plastic package.  
Typical applications include commercial and other narrowband and broadband high-performance  
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output  
amplifiers, and medium-haul digital radio transmitters.  
ELECTRICAL SPECIFICATIONS AT 22°C  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max Units  
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL  
Power at 1dB Gain Compression  
Maximum Stable Gain (S21/S12)  
Power Gain at P1dB  
P1dB  
MSG  
G1dB  
PAE  
VDS = 8 V; IDS = 50% IDSS  
VDS = 8 V; IDS = 50% IDSS  
VDS = 8 V; IDS = 50% IDSS  
27.5  
10.0  
28.5  
14.0  
11.0  
45  
dBm  
dB  
dB  
%
Power-Added Efficiency  
V
DS = 8 V; IDS = 50% IDSS  
;
POUT = P1dB  
Output Third-Order Intercept Point  
IP3  
V
DS = 10V; IDS = 50% IDSS  
(from 15 to 5 dB below P1dB  
)
Matched for optimal power  
Tuned for best IP3  
39  
41  
dBm  
Saturated Drain-Source Current  
Maximum Drain-Source Current  
Transconductance  
Gate-Source Leakage Current  
Pinch-Off Voltage  
Gate-Source Breakdown Voltage  
Gate-Drain Breakdown Voltage  
Thermal Resistivity (see Notes)  
IDSS  
IMAX  
GM  
IGSO  
|VP|  
VDS = 1.3 V; VGS = 0 V  
VDS = 1.3 V; VGS +1 V  
VDS = 1.3 V; VGS = 0 V  
VGS = -5 V  
VDS = 1.3 V; IDS = 1 mA  
IGS = 1 mA  
250  
315  
520  
280  
15  
1.0  
18  
375  
mA  
mA  
mS  
µA  
V
|VBDGS  
|VBDGD  
|
|
16  
16  
V
V
IGD = 1 mA  
18  
45  
V
DS > 6V  
θJC  
°C/W  
Phone: +1 408 850-5790  
Fax: +1 408 850-5766  
http:// www.filcs.com  
Revised: 8/05/04  
Email: sales@filcsi.com  

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