Datasheet > FPD1050_1

FPD1050_1

更新时间： 2024-01-11 03:27:09

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
3页	150K
描述
0.75W POWER PHEMT

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数据手册

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FPD1050_1 数据手册

FPD1050

Datasheet v3.0

0.75W POWER PHEMT

FEATURES:

LAYOUT:

•

28.5 dBm Linear O/p Power at 12 GHz

11 dB Power Gain at 12 GHz

14 dB Maximum Stable Gain at 12 GHz

41 dBm Output IP3

45% Power-Added Efficiency

GENERAL DESCRIPTION:

The

FPD1050

Electron

AlGaAs/InGaAs

Mobility

pseudomorphic

High

Transistor (PHEMT), featuring a 0.25 µm by

1050 µm Schottky barrier gate, defined by high

-resolution stepper-based photolithography.

The double recessed gate structure minimizes

TYPICAL APPLICATIONS:

•

Narrowband and broadband high-

performance amplifiers

parasitics to optimize performance.

The

•

SATCOM uplink transmitters

PCS/Cellular low-voltage high-efficiency

output amplifiers

epitaxial structure and processing have been

optimized for reliable high-power applications.

The FPD1050 is also available in the low cost

plastic SOT89 package.

•

Medium-haul digital radio transmitters

ELECTRICAL SPECIFICATIONS :

PARAMETER

SYMBOL

P1dB

CONDITIONS

MIN TYP

MAX

UNITS

dBm

Power at 1dB Gain Compression

Maximum Stable Gain (S21/S12)

VDS = 8 V; IDS = 50% IDSS

27.5

28.5

14.0

MSG

Power Gain at P1dB

G1dB

PAE

VDS = 8 V; IDS = 50% IDSS

10.0

11.0

Power-Added Efficiency

VDS = 8 V; IDS = 50% IDSS; POUT = P1dB

Output Third-Order Intercept Point

(from 15 to 5 dB below P1dB)

VDS = 8V; IDS = 50% IDSS

IP3

Matched for optimal power; Tuned for best IP3

dBm

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

260

325

385

Maximum Drain-Source Current

Transconductance

IMAX

520

280

µA

VDS = 1.3 V; VGS ≅ +1 V

VDS = 1.3 V; VGS = 0 V

VGS = -5 V

Gate-Source Leakage Current

Pinch-Off Voltage

IGSO

|VP|

VDS = 1.3 V; IDS = 1 mA

IGS = 1 mA

1.0

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

|VBDGS|

|VBDGD|

θJC

12.0

14.5

14.0

16.0

IGD = 1 mA

VDS > 6V

°C/W

Note:¹T_Ambient= 22°C; RF specifications measured at f = 12 GHz using CW signal

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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