Datasheet > FPD1500P100

FPD1500P100

更新时间： 2024-01-19 12:29:26

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
3页	183K
描述
1W PACKAGED POWER PHEMT

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FPD1500P100 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

FPD1500P100 数据手册

FPD1500P100

1W PACKAGED POWER PHEMT

• FEATURES

♦ 29.5 dBm Linear Output Power

♦ 18 dB Power Gain at 2 GHz

♦ 10.5 dB Maximum Stable Gain at 10 GHz

♦ 39 dBm Output IP3

♦ 45% Power-Added Efficiency at 2 GHz

• DESCRIPTION AND APPLICATIONS

The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility

Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier gate, defined by high-

resolution stepper-based photolithography. The recessed and offset Gate structure minimizes

parasitics to optimize performance. The epitaxial structure and processing have been optimized for

reliable high-power applications. The FPD1500P100 also features Si₃N₄passivation and is also

available in die form and in the low cost plastic SOT89 and DFN plastic packages.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT f = 2 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Power Gain at P_1dB

Maximum Stable Gain (S₂₁/S₁₂)

P_1dB

G_1dB

SSG

V_DS= 8 V; I_DS= 50% I_DSS

f = 2 GHz

28.0

17.5

29.5

18.0

dBm

21.5

9.5

22.0

10.5

f = 10 GHz

Power-Added Efficiency

PAE

IP3

V_DS= 8 V; I_DS= 50% I_DSS

;

P_OUT= P_1dB

Output Third-Order Intercept Point

V_DS= 8V; I_DS= 50% I_DSS

Matched for optimal power

(from 15 to 5 dB below P_1dB

)

dBm

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -5 V

V_DS= 1.3 V; I_DS= 1.5 mA

I_GD= 1.5 mA

375

465

750

400

1.0

16.0

550

µA

1.3

0.7

14.5

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

|V_BDGD

_DS> 6V

θ_JC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Released: 6/27/05

Email: sales@filcsi.com

12 3

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