FPD1000V

更新时间： 2024-09-22 22:32:03

品牌	Logo	应用领域
FILTRONIC		晶体晶体管
页数	文件大小	规格书
3页	198K
描述
1W POWER PHEMT

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FPD1000V 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

FPD1000V 数据手册

PRELIMINARY

FPD1000V

1W POWER PHEMT

DRAIN

BOND

• FEATURES (1.8 GHz)

♦ 31 dBm Linear Output Power

♦ 16 dB Power Gain

PAD (2X)

♦ Useable Gain to 10 GHz

♦ 41 dBm Output IP3

♦ Maximum Stable Gain of 20 dB

♦ 50% Power-Added Efficiency

♦ 10V Operation / Plated Source Thru-Vias

GATE

BOND

DIE SIZE (µm): 650 x 800

DIE THICKNESS: 75µm

PAD (2X)

BONDING PADS (

µm): >70 x 65

• DESCRIPTION AND APPLICATIONS

The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The

FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ Max Units

RF SPECIFICATIONS MEASURED AT f = 1.85 GHz USING CW SIGNAL

Power at 1dB Gain Compression

P_1dB

G_1dB

MSG

PAE

IM3

V_DS= 10V; I_DS= 200 mA

Γ_Sand Γ_Ltuned for Optimum IP3

V_DS= 10V; I_DS= 200 mA

Γ_Sand Γ_Ltuned for Optimum IP3

V_DS= 10 V; I_DS= 200mA

P_IN= 0dBm, 50Ω system

V_DS= 10V; I_DS= 200 mA

Γ_Sand Γ_Ltuned for Optimum IP3

16.0

dBm

Power Gain at dB Gain Compression

14.5

Maximum Stable Gain

S₂₁/S₁₂

Power-Added Efficiency

at 1dB Gain Compression

3^rd-Order Intermodulation Distortion

Γ_Sand Γ_Ltuned for Optimum IP3

_DS= 10V; I_DS= 200 mA

P_OUT= 19 dBm (single-tone level)

-46

-44

dBc

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -3 V

V_DS= 1.3 V; I_DS= 2.4 mA

I_GS= 2.4 mA

480

650

1100

720

0.9

720

µA

1.4

0.7

|V_BDGS

|V_BDGD

I_GD= 2.4 mA

See Note on following page

Θ_CC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 4/29/05

Email: sales@filcsi.com

12 3

中文翻译

下载PDF

与FPD1000V相关器件

型号	品牌	获取价格	描述	数据表
FPD-101R008-0E	FUJITSU	获取价格	4-Channel Optical Transceiver
FPD-102R008-0E	FUJITSU	获取价格	4-Channel Optical Transceiver
FPD1050	RFMD	获取价格	0.75W POWER pHEMT
FPD1050	FILTRONIC	获取价格	0.75W POWER PHEMT
FPD1050_1	FILTRONIC	获取价格	0.75W POWER PHEMT
FPD1050-000	RFMD	获取价格	0.75W POWER pHEMT
FPD1050-000S3	RFMD	获取价格	0.75W POWER pHEMT
FPD1050-000SQ	RFMD	获取价格	0.75W POWER pHEMT
FPD1050SOT89	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD1050SOT89_1	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT