FPD10000AF

更新时间： 2024-02-06 08:48:52

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
3页	186K
描述
10W PACKAGED POWER PHEMT

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中文翻译

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技术参数
数据手册

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FPD10000AF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.06	Is Samacsys：	N
Base Number Matches：	1

FPD10000AF 数据手册

PRELIMINARY

FPD10000AF

10W PACKAGED POWER PHEMT

• PERFORMANCE (1.8 GHz)

♦ 40 dBm Output Power (P_1dB

)

♦ 11 dB Power Gain (G_1dB

)

♦ -44 dBc WCDMA ACPR at 30 dBm output power

♦ 180 to 300 mA typical quiescent current (I_DQ)

♦ 55% Power-Added Efficiency

♦ Evaluation Boards Available

SEE PACKAGE

OUTLINE FOR

MARKING CODE

♦ Additional Design Data Available on Website

♦ Usable Gain to 3.8GHz

• DESCRIPTION AND APPLICATIONS

The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flange-

mount package has been optimized for low electrical parasitics and optimal heatsinking.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Class B Operation

Power Gain at dB Gain Compression

P_1dB

G_1dB

MSG

PAE

V_DS= 12V; I_DQ= 180 mA

dBm

V_DS= 12V; I_DQ= 180 mA

V_DS= 12V; I_DQ= 300 mA

16.5

18.0

Maximum Stable Gain: S₂₁/S₁₂

P_IN= 0dBm, 50Ω system

Power-Added Efficiency

at 1dB Gain Compression

Adjacent Channel Power Ratio

_DS= 12 V; I_DQ= 180 mA

V_DS= 12 V; I_DQ= 300 mA

V_DS= 12V; I_DQ= 180 mA

I_RF(drive-up current) ~ 1.5A

V_DS= 12V; I_DQ= 180 mA

Channel power = 30 dBm

WCDMA BTS Forward (64 channels) ACPR

10.15 dB Pk/Avg 0.001%

-44

dBc

Saturated Drain-Source Current

Gate-Source Leakage Current

Pinch-Off Voltage

I_DSS

I_GSO

|V_P|

V_DS= 3.0 V; V_GS= 0 V

V_GS= -3 V

V_DS= 3.0 V; I_DS= 19 mA

I_GD= 19 mA

5.2

1.1

3.5

Gate-Drain Breakdown Voltage

Thermal Resistivity (channel-to-case)

|V_BDGD

See Note on following page

Θ_CC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 12/07/04

Email: sales@filcsi.com

12 3

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