Datasheet > FP35R12N2T7_B11

FP35R12N2T7_B11

更新时间： 2024-11-22 11:14:19

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FP35R12N2T7_B11 数据手册

FP35R12N2T7_B11

™

EconoPIM 2 module

Preliminary datasheet

™

EconoPIM 2 module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC

Features

• Electrical features

- V_CES= 1200 V

- I_{C nom}= 35 A / I_CRM= 70 A

- TRENCHSTOP^TMIGBT7

- Low V_CEsat

- Overload operation up to 175°C

• Mechanical features

- High power and thermal cycling capability

- Integrated NTC temperature sensor

- Copper base plate

- Al₂O₃substrate with low thermal resistance

- PressFIT contact technology

Potential applications

• Auxiliary inverters

• Motor drives

• Servo drives

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

0.10

2021-06-17

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型号	品牌	获取价格	描述	数据表
FP35R12U1T4	INFINEON	获取价格	SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT /
FP35R12U1T4BPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
FP35R12W2T4	INFINEON	获取价格	EasyPIM™ module with fast Trench/Fieldstop IG
FP35R12W2T4_B11	INFINEON	获取价格	EasyPIM2B module PressFIT with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode
FP35R12W2T4B11BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
FP35R12W2T4P	INFINEON	获取价格	TIM
FP35R12W2T4P_B11	INFINEON	获取价格	TIM
FP35R12W2T4PB11BPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
FP35R12W2T4PBPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
FP35R12W2T7	INFINEON	获取价格	EasyPACK™ 2B 1200 V, 35 A PIM IGBT模块，采用TRENCH