FP4050

更新时间： 2024-11-20 22:32:03

品牌	Logo	应用领域
FILTRONIC		晶体晶体管
页数	文件大小	规格书
2页	42K
描述
2-WATT POWER PHEMT

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中文翻译

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技术参数
数据手册

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FP4050 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

FP4050 数据手册

PRELIMINARY DATA SHEET

FP4 0 5 0

2 - WATT POWER P HEMT

DRAIN

BOND PAD

FEATURES

48 dBm IP3 at 2 GHz

34 dBm P-1dB at 2 GHz

14 dB Power Gain at 2 GHz

SOURCE

BOND PAD

(2X)

GATE

BOND PAD

DESCRIPTION AND APPLICATIONS

The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)

Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-

write 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes

parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.

Typical applications include commercial and military high-performance power amplifiers, including

SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and

medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and

ISM band spread spectrum applications.

ELECTRICAL SPECIFICATIONS @ T_{Am b ie n t}= 2 2 ± 3 °C

Parameter

Symbol

Test Conditions

Min

Typ Max Units

Output Power @

P_1dB

f = 2 GHz; V_DS= 8V; I_DS= 50% I_DSS

dBm

1 dB Compression

f = 2 GHz; V_DS= 8V; I_DS= 50% I_DSS

V_DS= 2V; V_GS= 0V

Power Gain @

1 dB Compression

1dB

Saturated Drain-Source Current

I_DSS

950

1100 1300

Maximum Drain-Source Current

Transconductance

I_MAX

G_M

V_DS= 2V; V_GS= 1V

2200

880

-1.2

V_DS= 2 V; V_GS= 0 V

V_DS= 2 V; I_DS= 10 mA

Pinch-Off Voltage

V_P

Gate-Drain Breakdown

Voltage Magnitude

|V_BDGD

I_GS= 20 mA

V_GS= -5 V

|V_BDGS

0.2

Gate-Source Breakdown

Voltage Magnitude

Gate-Source Leakage

Current Magnitude

|I_GSL

Thermal Resistivity

Θ_JC

°C/W

Ph on e : (408) 988-1845

Fa x: (408) 970-9950

http :/ / www.filtronicsolidstate.com

Re vise d : 10/04/00

中文翻译

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