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FP40R12KT3G PDF预览

FP40R12KT3G

更新时间： 2024-11-21 10:23:19
品牌 Logo 应用领域
EUPEC 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
11页 401K
描述
IGBT-modules

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中文翻译

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FP40R12KT3G 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.59Is Samacsys：N
外壳连接：ISOLATED最大集电极电流 (IC)：55 A
集电极-发射极最大电压：1200 V配置：COMPLEX
JESD-30 代码：R-XUFM-X35元件数量：7
端子数量：35封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：610 ns
标称接通时间 (ton)：140 nsBase Number Matches：1

FP40R12KT3G 数据手册

 浏览型号FP40R12KT3G的Datasheet PDF文件第2页浏览型号FP40R12KT3G的Datasheet PDF文件第3页浏览型号FP40R12KT3G的Datasheet PDF文件第4页浏览型号FP40R12KT3G的Datasheet PDF文件第5页浏览型号FP40R12KT3G的Datasheet PDF文件第6页浏览型号FP40R12KT3G的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FP40R12KT3G  
Vorläufige Daten  
preliminary data  
IGBT-Wechselrichter / IGBT-inverter  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C  
T† = 25°C  
I† ÒÓÑ  
I†  
40  
55  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms, T† = 80°C  
T† = 25°C  
I†ç¢  
PÚÓÚ  
80  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
210  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/-20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 40 A, V•Š = 15 V, TÝÎ = 25°C  
I† = 40 A, V•Š = 15 V, TÝÎ = 125°C  
V†Š ÙÈÚ  
1,80 2,30  
2,05  
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 1,50 mA, V†Š = V•Š, TÝÎ = 25°C  
V•ŠÚÌ  
Q•  
5,0  
5,8  
0,33  
6,0  
6,5  
V
µC  
Â
Gateladung  
gate charge  
V•Š = -15 V ... +15 V  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
2,50  
0,09  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 40 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 27 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 27 Â, TÝÎ = 125°C  
tÁ ÓÒ  
tØ  
0,09  
0,09  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 40 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓÒ = 27 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 27 Â, TÝÎ = 125°C  
0,03  
0,05  
µs  
µs  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 40 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 27 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 27 Â, TÝÎ = 125°C  
tÁ ÓËË  
tË  
0,42  
0,52  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 40 A, V†Š = 600 V  
V•Š = ±15 V, R•ÓËË = 27 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 27 Â, TÝÎ = 125°C  
0,07  
0,09  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 40 A, V†Š = 600 V, L» = 45 nH  
V•Š = ±15 V, R•ÓÒ = 27 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓÒ = 27 Â, TÝÎ = 125°C  
EÓÒ  
EÓËË  
4,10  
6,00  
mJ  
mJ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 40 A, V†Š = 600 V, L» = 45 nH  
V•Š = ±15 V, R•ÓËË = 27 Â, TÝÎ = 25°C  
V•Š = ±15 V, R•ÓËË = 27 Â, TÝÎ = 125°C  
3,10  
3,60  
mJ  
mJ  
Kurzschlußverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎù125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
160  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
0,60 K/W  
prepared by: Andreas Schulz  
approved by: Robert Severin  
date of publication: 2003-7-8  
revision: 2.1  
1
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中文翻译

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