型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FP35R12KT4 | INFINEON |
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EconoPIM2 module with Trench/Fieldstop IGBT4 and EmCon4 diode | |
FP35R12KT4_B11 | INFINEON |
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EconoPIM2 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and Press | |
FP35R12KT4_B15 | INFINEON |
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EconoPIM™2 module with Trench/Fieldstop IGBT4 | |
FP35R12KT4B11BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FP35R12KT4-B15 | INFINEON |
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Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 | |
FP35R12KT4B15BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FP35R12KT4P | INFINEON |
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暂无描述 | |
FP35R12N2T7 | INFINEON |
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EconoPIM? 2 1200 V、35 A三相PIM IGBT模块,采用TRENCHS | |
FP35R12N2T7_B11 | INFINEON |
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PressFIT | |
FP35R12U1T4 | INFINEON |
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SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / |