Datasheet > FMW60N105S2FDHF

FMW60N105S2FDHF

更新时间： 2024-03-03 10:11:16

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	920K
描述
TO-247-P2

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中文翻译

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数据手册

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FMW60N105S2FDHF 数据手册

FUJI POWER MOSFET

FMW60N105S2FDHF

http://www.fujielectric.com/products/semiconductor/

Typical C_ossstored energy

Typical Switching Characteristics vs. I^DTch=25℃

t=f(I^D):VDD=400V,VGS=10V/0V,RG=15Ω

10000

1000

100

t_r

(oﬀ)

(on)

t_f

100

200

300

400

500

600

0.1

100

V_DS[V]

I_D[A]

Typical Gate Charge Characteristics

V^GS=f(QG) : ID=29.2A, Tch=25℃

Maximum Avalanche Energy vs. starting T^ch

E(AV)=f(starting Tch):Vcc=60V,I(AV)<=4.4A

2000

1800

1600

1400

1200

1000

800

400V

120V

I_AS=1.4A

V_DD=480V

I_AS=2.7A

I_AS=4.4A

600

400

200

100

150

Q_G[nC]

starting T_ch[℃]

Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

10¹

10⁰

10^-1

10^-2

10^-3

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

t [sec]

1 2 3 456 7 8

中文翻译

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