Datasheet > FMW8

FMW8

更新时间： 2023-01-02 23:50:27

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
2页	32K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 11V V(BR)CEO, 2-Element, NPN, Silicon

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数据手册

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FMW8 数据手册

EMX5 / UMW7N / UMW8N / UMX5N /

FMW7 / FMW8 / IMX5

Transistors

High transition frequency (dual transistors)

EMX5 / UMW7N / UMW8N / UMX5N /

FMW7 / FMW8 / IMX5

zFeatures

1) Two 2SC3838K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f^T=3.2GHz)

3) Low output capacitance. (Cob=0.9pF)

zEquivalent circuit

UMW7N

FMW7

UMW8N

FMW8

EMX5 / UMX5N

IMX5

(3)

(2)

(1)

(3)

(4)

(5)

(3) (2)

(1)

(3) (4)

(5)

(3) (2)

(1)

(4) (5)

(6)

(4)

(5)

(2)

(1)

(4)

(5)

(6)

(3)

(2)

(1)

(4)

(5)

(2)

(1)

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

Collector current

EMX5 / UMW7N / UMW8N / UMX5N

Collector power

150(TOTAL)

300(TOTAL)

150

dissipation

FMW7N / FMW8 / IMX5

Junction temperature

Storage temperature

°C

Tstg

−55~

+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

zElectrical characteristics (Ta = 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Min.

Typ.

−

Max.

−

Conditions

Unit

BV^CBO

BVCEO

BVEBO

=10µA

−

C=1mA

−

=10µA

CB=10V

EB=2V

CBO

EBO

CE(sat)

FE1 / FE2

−

0.5

270

0.5

µA

−

Emitter cutoff current

−

DC current transfer ratio

−

CE/I

=10V/5mA

−

C/I

=10mA/5mA

Collector-emitter saturation voltage

−

0.5

1.4

−

CE/I

=10V/5mA

=10V/10mA, f=200MHz

=0A

hFE pairing

Transition frequency

3.2

0.9

−

GHz

Output capacitance

1.55

Cob

CB/f=10V/1MHz, I

Transition frequency of the device.

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