Datasheet > FMW60N190S2HF

FMW60N190S2HF

更新时间： 2024-11-21 15:18:55

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	416K
描述
TO-247-P2

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中文翻译

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数据手册

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FMW60N190S2HF 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FMW60N190S2HF

Super J MOS^®S2 series

Features

N-Channel enhancement mode power MOSFET

Equivalent circuit schematic

Pb-free lead terminal

RoHS compliant

uses Halogen-free molding compound

②Drain

Applications

For switching

①

Gate

①

②

③Source

③

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Parameter

Symbol

Characteristics

Unit

Remarks

600

Drain-Source Voltage

DSX

VGS=-30V

=25°C Note*1,2

=100°C Note*1,2

Continuous Drain Current

12.6

Pulsed Drain Current

Gate-Source Voltage

Note *2

±30

Non-Repetitive

Maximum Avalanche Current

2.3

Note *3

Note *4

Non-Repetitive

Maximum Avalanche Energy

559

Maximum Drain-Source dV/dt

dV^DS/dt

V/ns

DS≤ 600V

=25°C Note*1,2

Continuous

Diode Forward Current

12.6

=100°C Note*1,2

Pulsed Diode Forward Current

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

SDP

Note *2

Note *5

Note *6

dV/dt

-di/dt

V/ns

A/μs

100

2.5

=25°C

Maximum Power Dissipation

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Maximum duty cycle D=0.65

Note *2 : Limited by maximum channel temperature.

Note *3 : T^ch≤150°C, See Fig.1 and Fig.2

Note *4 : Starting T^ch=25°C, IAS=1.4A, L=559mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

E^ASlimited by maximum channel temperature and avalanche current.

Note *5 : I^SD≤15.5A, -di/dt≤100A/μs, VDS peak≤ 600V, Tch≤150°C.

Note *6 : I^SD≤15.5A, dV/dt≤15V/ns, VDS peak≤ 600V, Tch≤150°C.

9120

MARCH 2017

12 3 4 5 6 7 8

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