是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | ROHS COMPLIANT PACKAGE | Reach Compliance Code: | compliant |
Factory Lead Time: | 10 weeks 3 days | 风险等级: | 2.28 |
Is Samacsys: | N | 其他特性: | INDUCTANCE 0.4 MILLIHENRY |
认证: | UL; IEC; VDE; ENEC-10 | 滤波器类型: | THREE PHASE EMI FILTER |
高度: | 43 mm | 高电位: | 3000 V |
最大漏电流: | 3 mA | 长度: | 66 mm |
安装类型: | PANEL MOUNT | 工作频率: | 50/60Hz Hz |
最高工作温度: | 100 °C | 最低工作温度: | -25 °C |
物理尺寸: | L66.0XB51.0XH43.0 (mm)/L2.598XB2.008XH1.693 (inch) | 额定电流: | 10 A |
额定电压: | 440 V | 宽度: | 51 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FMW-65-0005 | SCHURTER | Compact 1-stage filter for 3-phase systems with neutral conductor |
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FMW6T149 | ROHM | RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, MINIMOLD, FMT, 5 |
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FMW7 | ROHM | Small Signal Bipolar Transistor, 0.05A I(C), 11V V(BR)CEO, 2-Element, NPN, Silicon |
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FMW73N20GSC | FUJI | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Me |
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FMW73N20GSC-K1 | FUJI | Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Me |
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FMW79N60S1FDHF | FUJI | TO-247-P2 |
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