Datasheet > FMW60N099S2HF

FMW60N099S2HF

更新时间： 2024-03-03 10:09:51

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	420K
描述
TO-247-P2

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中文翻译

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数据手册

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FMW60N099S2HF 数据手册

FUJI POWER MOSFET

FMW60N099S2HF

http://www.fujielectric.com/products/semiconductor/

Drain-Source On-state Resistance

Drain-Source Breakdown Voltage

R^DS(on)=f(Tch):ID=14.6A,VGS=10V

BV^DSS=f(Tch):ID=10mA,VGS=0V

0.25

0.20

0.15

0.10

0.05

0.00

700

650

600

550

500

This curve is not a guaranteed performance and is a reference

max.

typ.

-60

-20

T^ch[℃]

100

140

-75 -50 -25

25 50 75 100 125 150 175

Tch[℃]

Gate Threshold Voltage vs. T^ch

Typical Transfer Characteristic

I^D=f(VGS) : 80μs pulse test, VDS=25V

VGS(th)=f(Tch) : VDS = VGS, ID=1.54mA

100

typ.

Tch=25℃

150℃

0.1

-60

-20

Tch[℃]

Typical Transconductance

100

140

VGS[V]

Typical Forward Characteristics of Reverse Diode

gfs=f(I^D) : 80μs pulse test, VDS=25V

I^SD=f(VSD):80 μs pulse test

100

Tch=25℃

150℃

Tch=25℃

150℃

0.1

100

0.5

1.5

ID[A]

V^SD[V]

1 2 345 6 7 8

中文翻译

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