Datasheet > FMMTA2369A-P5

FMMTA2369A-P5

更新时间： 2024-11-15 04:18:43

品牌	Logo	应用领域
捷特科 - ZETEX		晶体开关晶体管局域网
页数	文件大小	规格书
2页	38K
描述
SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS

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FMMTA2369A-P5 数据手册

SOT23 NPN SILICON PLANAR

FMMT2369

FMMT2369A

HIGH SPEED SWITCHING TRANSISTORS

ISSUE 3 AUGUST 1995

APPLICATIONS

These devices are suitable for use in high speed, low current

switching applications

PARTMARKING DETAILS

FMMT2369

- 1J

- 9R

FMMT2369R

FMMTA2369A - P5

FMMTA2369AR - 9A

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CES

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

4.5

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

200

°C

P_tot

330

T_j:T_stg

-55 to +150

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL

FMMT2369 FMMT2369A UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO

I_C=10µA, I_E=0

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)CES

V_(BR)EBO

4.5

I_C=10mA, I_B=0*

I_C=10µA, V_BE=0

I_E=10µA, I_C=0

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

I_CBO

400

V_CB=20V, I_E=0

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

h_FE

0.25

0.20

0.85

120

I_C=10mA, I_B=1mA*

Base-Emitter

Saturation Voltage

0.7

0.85 0.7

Static Forward

Current Transfer

Ratio

120

I_C=10mA, V_CE=1V*

I_C=10mA, V_CE=1V, T_amb=-55°C*

I_C=100mA, V_CE=1V*

I_C=100mA, V_CE=2V*

Output Capacitance C_obo

V_CB=5V, I_E=0, f=140KHz

Turn-on Time

Turn-off Time

Storage Time

t_on

t_off

t_s

V_CC=3V, V_BE(off=₎1.5V I_C=10mA,

I_B1=3mA (See t_ONcircuit)

V_CC=3V, I_C=10mA, I_B1=3mA

I_B2=1.5mA(See t_OFFcircuit)

I_C=I_B1= I_B2=10mA

(See Storage test circuit)

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

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