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FMMTA42TA PDF预览

FMMTA42TA

更新时间: 2024-11-15 11:56:39
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 131K
描述
FMMTA42 SOT23 NPN Silicon planar high voltage transistor

FMMTA42TA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:1.26
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

FMMTA42TA 数据手册

 浏览型号FMMTA42TA的Datasheet PDF文件第2页浏览型号FMMTA42TA的Datasheet PDF文件第3页浏览型号FMMTA42TA的Datasheet PDF文件第4页 
FMMTA42  
SOT23 NPN Silicon planar high voltage transistor  
Device marking  
FMMTA42 - 3E  
Complementary types  
FMMTA92  
Absolute maximum ratings  
Parameter  
Symbol  
FMMTA42  
Unit  
Collector-base voltage  
V
V
V
300  
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
300  
V
V
5
200  
Continuous collector current  
I
mA  
mW  
°C  
C
Power dissipation at T  
=25°C  
P
330  
amb  
tot  
Operating and storage temperature range  
T :T  
-55 to +150  
j
stg  
Electrical characteristics (at T  
= 25°C).  
amb  
Parameter  
Symbol  
Min.  
Max.  
Unit  
Conditions  
Collector-base breakdown  
voltage  
Collector-emitter breakdown V  
voltage  
Emitter-base breakdown  
voltage  
Collector cut-off current  
V
300  
V
I =100µA, I =0  
C E  
(BR)CBO  
(BR)CEO  
(BR)EBO  
CBO  
(*)  
300  
6
V
V
I =1mA, I =0  
C
B
V
I =100µA, I =0  
E C  
I
I
0.1  
0.1  
µA  
µA  
µA  
µA  
V
V
V
V
V
=200V, I =0  
E
CB  
CB  
EB  
EB  
=160V, I =0  
E
Emitter cut-off current  
=6V, I =0  
EBO  
C
=4V, I =0  
C
(*)  
(*)  
Collector-emitter saturation  
voltage  
Base-emitter saturation  
voltage  
Static forward  
current transfer  
ratio  
V
V
h
0.5  
0.9  
I =20mA, I =2mA  
CE(sat)  
BE(sat)  
C
B
V
I =20mA, I =2mA  
C
B
(*)  
(*)  
25  
40  
40  
50  
I =1mA, V =10V  
FE  
C
CE  
I =10mA, V =10V  
C
CE  
(*)  
I =30mA, V =10V  
C
CE  
Transition frequency  
f
MHz  
pF  
I =10mA, V =20V  
T
C
CE  
f=20MHz  
Output capacitance  
C
6
V
=20V, f=1MHz  
CB  
obo  
NOTES:  
(*) Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.  
Issue 6 - December 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  

FMMTA42TA 替代型号

型号 品牌 替代类型 描述 数据表
FMMTA42TC DIODES

完全替代

Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon,

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