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FMMTA44 PDF预览

FMMTA44

更新时间: 2024-11-15 12:27:35
品牌 Logo 应用领域
戈采 - FCI 晶体晶体管
页数 文件大小 规格书
2页 177K
描述
NPN EPITAXIAL TRANSISTOR Junction Temperature Tj 150

FMMTA44 数据手册

 浏览型号FMMTA44的Datasheet PDF文件第2页 
NPN EPITAXIAL TRANSISTOR  
SOT-223  
REF.  
REF.  
Min.  
6.70  
2.90  
0.02  
0̓  
Max.  
7.30  
3.10  
0.10  
10̓  
Min.  
13̓TYP.  
2.30 REF.  
Max.  
A
C
D
E
I
B
J
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
H
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Junction Temperature  
Storage Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Tj  
Ratings  
Unit  
ć
ć
V
+150  
-55 ~ +150  
500  
Tstg  
VCBO  
VCEO  
VEBO  
IC  
400  
V
6.0  
V
300  
mA  
Total Power Dissipation  
PD  
1.2  
W
Characteristics at Ta = 25к  
Symbol  
Min.  
Typ.  
Max.  
-
Unit  
V
Test Conditions  
BVCBO  
500  
-
-
-
-
-
-
-
-
-
-
-
-
-
4
IC=100uA  
BVCEO  
BVEBO  
ICBO  
400  
6
-
V
IC=1mA  
-
V
IE=10uA  
-
100  
500  
100  
375  
750  
750  
-
nA  
nA  
nA  
mV  
mV  
mV  
VCB=400V  
ICES  
-
VCB=400V  
IEBO  
-
VEB=4V  
VCE(sat)1  
VCE(sat)2  
VBE(sat)  
hFE1  
-
IC=20mA, IB=2mA  
IC=50mA, IB=5 mA  
IC=1 0mA, IB=1mA  
VCE=10V, IC=1mA  
VCE=10V, IC=10mA  
VCE=10V, IC=50mA  
-
-
40  
50  
45  
40  
-
hFE2  
300  
-
hFE3  
hFE4  
-
VCE=10V, IC=100mA  
VCE=20V, f=1MHz  
Cob  
6
pF  

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