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FMMTA42 PDF预览

FMMTA42

更新时间: 2024-11-14 22:48:59
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管高压局域网
页数 文件大小 规格书
1页 40K
描述
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS

FMMTA42 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.13最大集电极电流 (IC):0.2 A
基于收集器的最大容量:8 pF集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified参考标准:CECC50002-243
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

FMMTA42 数据手册

  
SOT23 NPN SILICON PLANAR  
HIGH VOLTAGE TRANSISTORS  
FMMTA42  
ISSUE 4 – MARCH 2001  
PARTMARKING DETAIL –  
FMMTA42 – 3E  
E
FMMTA42R –  
7E  
C
B
COMPLEMENTARY TYPES – FMMTA42 – FMMTA92  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
FMMTA42  
UNIT  
V
Collector-Base Voltage  
300  
300  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
200  
mA  
mW  
°C  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C).  
PARAMETER  
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.  
Collector-Base  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
300  
300  
6
200  
200  
6
V
V
V
IC=100µA, IE=0  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
IC=1mA, IB=0*  
IE=100µA, IC=0  
VCB=200V, IE=0  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.1  
0.1  
0.5  
0.9  
µA  
µA  
0.1  
V
CB=160V, IE=0  
Emitter Cut-Off  
Current  
IEBO  
µA  
µA  
V
V
EB=6V, IC=0  
EB=4V, IC=0  
0.1  
0.4  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
hFE  
V
IC=20mA, IB=2mA*  
Base-Emitter  
Saturation Voltage  
0.9  
200  
8
V
IC=20mA, IB=2mA*  
Static Forward  
Current Transfer  
Ratio  
25  
40  
40  
25  
40  
50  
IC=1mA, VCE=10V*  
IC=10mA, VCE=10V*  
IC=30mA, VCE=10V*  
Transition  
Frequency  
fT  
50  
50  
MHz  
pF  
IC=10mA, VCE=20V  
f=20MHz  
Output Capacitance Cobo  
6
VCB=20V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
TBA  

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