5秒后页面跳转
FMMTA56 PDF预览

FMMTA56

更新时间: 2024-02-09 03:46:08
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
1页 40K
描述
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FMMTA56 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SOT-23, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.13
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.33 W认证状态:Not Qualified
参考标准:CECC50002-244子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

FMMTA56 数据手册

  
SOT23 PNP SILICON PLANAR  
FMMTA56  
MEDIUM POWER TRANSISTORS  
ISSUE 4 – MARCH 2001  
FEATURES  
E
*
Gain of 50 at IC=100mA  
C
PARTMARKING DETAIL -  
FMMTA56 - 2G  
B
FMMTA56R - MB  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
FMMTA56  
UNIT  
V
Collector-Base Voltage  
-80  
-80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-4  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
-500  
mA  
mW  
°C  
Ptot  
330  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
FMMTA56  
PARAMETER  
SYMBOL MIN. MAX. UNIT  
CONDITIONS.  
IC=-1mA, IB=0*  
Collector-Emitter Breakdown  
Voltage  
V(BR)CEO  
V(BR)EBO  
ICES  
-80  
-4  
V
Emitter-Base Breakdown  
Voltage  
V
IE=-100µA, IC=0  
VCE=-60V  
Collector-Emitter Cut-Off  
Current  
-0.1  
-0.1  
µA  
µA  
Collector-Base Cut-Off Current ICBO  
VCB=-80V, IE=0  
V
CB=-60V, IE=0  
Static Forward Current Transfer hFE  
Ratio  
50  
50  
IC=-10mA, VCE=1V*  
IC=-100mA, VCE=1V*  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
VBE(on)  
fT  
-0.25  
-1.2  
V
IC=-100mA, IB=-10mA*  
Base-Emitter  
Turn-On Voltage  
V
IC=-100mA, VCE=-1V*  
Transition  
Frequency  
100  
MHz  
IC=-10mA, VCE=-2V  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
TBA  

与FMMTA56相关器件

型号 品牌 获取价格 描述 数据表
FMMTA56-2G ZETEX

获取价格

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
FMMTA56R ZETEX

获取价格

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
FMMTA56R DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
FMMTA56R-MB ZETEX

获取价格

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
FMMTA56RTA DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon,
FMMTA56RTC DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
FMMTA56TA ZETEX

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
FMMTA56TA DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
FMMTA56TC DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
FMMTA56TC ZETEX

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,