FMMTA42RTC

更新时间： 2024-11-15 13:07:51

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数据手册

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FMMTA42RTC 数据手册

FMMTA42

SOT23 NPN Silicon planar high voltage transistor

Device marking

FMMTA42 - 3E

Complementary types

FMMTA92

Absolute maximum ratings

Parameter

Symbol

FMMTA42

Unit

Collector-base voltage

300

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

300

200

Continuous collector current

°C

Power dissipation at T

=25°C

330

amb

tot

Operating and storage temperature range

T :T

-55 to +150

stg

Electrical characteristics (at T

= 25°C).

amb

Parameter

Symbol

Min.

Max.

Unit

Conditions

Collector-base breakdown

voltage

Collector-emitter breakdown V

voltage

Emitter-base breakdown

voltage

Collector cut-off current

300

I =100µA, I =0

C E

(BR)CBO

(BR)CEO

(BR)EBO

CBO

(*)

300

I =1mA, I =0

I =100µA, I =0

E C

0.1

µA

=200V, I =0

=160V, I =0

Emitter cut-off current

=6V, I =0

EBO

=4V, I =0

(*)

Collector-emitter saturation

voltage

Base-emitter saturation

voltage

Static forward

current transfer

ratio

0.5

0.9

I =20mA, I =2mA

CE(sat)

BE(sat)

I =20mA, I =2mA

(*)

I =1mA, V =10V

I =10mA, V =10V

(*)

I =30mA, V =10V

Transition frequency

MHz

I =10mA, V =20V

f=20MHz

Output capacitance

=20V, f=1MHz

obo

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.

Issue 6 - December 2007

www.zetex.com

12 3 4

中文翻译

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