FMMT625Q

更新时间： 2024-11-19 13:45:39

品牌	Logo	应用领域
美台 - DIODES		小信号双极晶体管
页数	文件大小	规格书
4页	295K
描述
NPN, 150V, 1A, SOT23

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数据手册

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FMMT625Q 数据手册

SuperSOT

FMMT617 FMMT618

FMMT619 FMMT624

FMMT625

SOT23 NPN SILICON POWER

(SWITCHING) TRANSISTORS

ISSUE 3 - NOVEMBER 1995

FEATURES

* 625mW POWER DISSIPATION

I_CCONT 3A

12A Peak Pulse Current

Excellent H_FECharacteristics Up To 12A (pulsed)

Extremely Low Saturation Voltage E.g. 8mV Typ.

Extremely Low Equivalent On Resistance; R_CE(sat)

DEVICE TYPE

FMMT617

FMMT618

FMMT619

FMMT624

FMMT625

COMPLEMENT

FMMT717

FMMT718

FMMT720

FMMT723

PARTMARKING

R_CE(sat)

50mΩ at 3A

50mΩ at 2A

75mΩ at 2A

617

618

619

624

625

ABSOLUTE MAXIMUM RATINGS.

FMMT FMMT FMMT FMMT FMMT

PARAMETER

SYMBOL

617

618

619

624

125

625

150

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current**

Continuous Collector Current

Base Current

V_CBO

V_CEO

V_EBO

I_CM

I_C

2.5

I_B

500

°C

Power Dissipation at T_amb=25°C*

P_tot

625

Operating and Storage Temperature T_j:T_stg

Range

-55 to +150

Maximum power dissipation is calculated assuming that the device is mounted on a ceramic

substrate measuring 15x15x0.6mm

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

3 - 149

12 3 4

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