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FMMT6520TC PDF预览

FMMT6520TC

更新时间: 2024-01-20 08:35:46
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管开关光电二极管高压局域网
页数 文件大小 规格书
1页 53K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN AND ANTIMONY FREE, GREEN, SOT-23, 3 PIN

FMMT6520TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.33
最大集电极电流 (IC):0.5 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzVCEsat-Max:1 V
Base Number Matches:1

FMMT6520TC 数据手册

  
SOT23 PNP SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
FMMT6520  
ISSUE 2 - NOVEMBER 1995  
FEATURES  
*
*
350 Volt VCEO  
E
Gain of 15 at IC=-100mA  
C
APPLICATIONS  
SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS  
B
*
COMPLEMENTARY TYPE FMMT6517  
PARTMARKING DETAIL – 520  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
-350  
-350  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-5  
V
Continuous Collector Current  
Power Dissipation at Tamb= 25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
-500  
mA  
mW  
°C  
Ptot  
330  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
IC=-100µA, IE=0  
IC=-1mA, IB=0*  
IE=-10µA, IC=0  
VCB=-250V, IE=0  
VEB=-3V, IC=0  
Breakdown Voltages  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-350  
-350  
-5  
V
V
Cut-Off Currents  
-50  
-50  
nA  
nA  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.3  
-0.35  
-0.5  
-1.0  
V
V
V
V
IC=-10mA, IB=-1mA*  
IC=-20mA, IB=-2mA*  
IC=-30mA, IB=-3mA*  
IC=-50mA, IB=-5mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-0.75  
-0.85  
-0.90  
V
V
V
IC=-10mA, IB=-1mA*  
IC=-20mA, IB=-2mA*  
IC=-30mA, IB=-3mA*  
Base-Emitter Turn-On  
Voltage  
VBE(on)  
hFE  
-2.0  
V
IC=-100mA, VCE=-10V*  
Static Forward Current  
Transfer Ratio  
20  
30  
30  
20  
15  
IC=-1mA, VCE=-10V  
IC=-10mA, VCE=-10V*  
IC=-30mA, VCE=-10V*  
IC=-50mA, VCE=-10V*  
IC=-100mA, VCE=-10V*  
200  
200  
Output Capacitance  
Transition Frequency  
Cobo  
fT  
6
pF  
VCB=20V, f=1MHz  
50  
MHz  
IC=-10mA, VCE=-20V,  
f=20MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 172  

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