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FMMT493Q PDF预览

FMMT493Q

更新时间: 2023-09-24 09:17:42
品牌 Logo 应用领域
美台 - DIODES 小信号双极晶体管
页数 文件大小 规格书
2页 129K
描述
NPN, 100V, 1A, SOT23

FMMT493Q 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

FMMT493Q 数据手册

 浏览型号FMMT493Q的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
FMMT493  
ISSUE 3 - NOVEMBER 1995  
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FMMT593  
493  
E
C
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
120  
Collector-Emitter Voltage  
100  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Peak Pulse Current  
1
2
A
ICM  
A
Base Current  
IB  
200  
mA  
mW  
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
500  
Tj:Tstg  
= 25°C).  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
ICBO  
120  
100  
5
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=100V  
VCES=100V  
VEB=4V  
V
V
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
Saturation Voltages  
100  
100  
100  
nA  
nA  
nA  
ICES  
IEBO  
VCE(sat)  
0.3  
0.6  
V
V
IC=500mA, IB=50mA  
IC=1A, IB=100mA  
VBE(sat)  
VBE(on)  
1.15  
1.0  
V
V
IC=1A, IB=100mA  
IC=1A, VCE=10V  
Base-Emitter  
Turn On Voltage  
Static Forward Current  
Transfer Ratio  
hFE  
100  
100  
60  
IC=1mA, VCE=10V*  
IC=250mA, VCE=10V*  
IC=500mA, VCE=10V*  
IC=1A, VCE=10V*  
300  
20  
Transition Frequency  
fT  
150  
MHz  
pF  
IC=50mA, VCE=10V  
f=100MHz  
Collector-Base  
Breakdown Voltage  
Cobo  
10  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 119  

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