Datasheet > FMMT495

FMMT495

更新时间： 2023-12-06 20:08:46

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2133K
描述
SOT-23

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中文翻译

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数据手册

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FMMT495 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

FMMT495

TRANSISTOR (NPN)

SOT-23

FEATURE

 Low V_CE(sat)

 h_FEcharacterised up to 1A for high current gain hold up

 For general amplification

1. BASE

2. EMITTER

3. COLLECTOR

MARKING: 495

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

170

Collector-Emitter Voltage

150

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

250

℃/W

℃

R_ΘJA

T_J,T_stg

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

500

-55～+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100µA, I_E=0

170

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10mA, I_B=0

150

I_E=100µA, I_C=0

V_CB=150V, I_E=0

0.1

µA

Collector cut-off current

I_CES

V_CE=150V,V_BE=0

Emitter cut-off current

I_EBO

V_EB=4V, I_C=0

h_FE(1)

V_CE=10V, I_C=1mA

V_CE=10V, I_C=250mA

V_CE=10V, I_C=500mA

V_CE=10V, I_C=1A

100

h_FE(2)

300

DC current gain

h_FE(3)

h_FE(4)

V_CE(sat)(1)

I_C=250mA, I_B=25mA

I_C=500mA, I_B=50mA

V_CE=10V, I_C=500mA

I_C=500mA, I_B=50mA

V_CE=10V,I_C=50mA,f=100MHz

V^CB=10V,I^E=0,f=1MHz

0.2

0.3

Collector-emitter saturation voltage

V_CE(sat)(2)

Base-emitter turn-on voltage

Base-emitter saturation voltage

Transition frequency

V_BE(on)

V_BE(sat)

f_T

100

MHz

Collector output capacitance

C^ob

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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