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FMMT493-TP PDF预览

FMMT493-TP

更新时间: 2024-01-27 10:11:32
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 510K
描述
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

FMMT493-TP 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

FMMT493-TP 数据手册

 浏览型号FMMT493-TP的Datasheet PDF文件第2页浏览型号FMMT493-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
FMMT493  
Micro Commercial Components  
Features  
NPN Silicon Planar  
Medium Power  
Transistor  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
·
Power dissipation: PCM=250mW(Tamb=25)  
Collector current: Ic=1A  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Marking:493  
Maximum Ratings*  
SOT-23  
Symbol  
Rating  
Rating  
100  
120  
5.0  
1.0  
250  
Unit  
V
V
V
A
A
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
D
C
Collector Current,  
B
C
Ptot  
Power Dissipation at Tamb=25  
Operating Junction Temperature  
Storage Temperature  
mW  
TJ  
-55 to +150  
-55 to +150  
E
B
TSTG  
F
E
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
H
G
J
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector-Emitter Breakdown Voltage*  
(IC=10mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=100µAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=100µAdc, IC=0)  
Collector Cutoff Current  
(VCB=100Vdc, IE=0Vdc)  
K
100  
120  
5.0  
---  
---  
---  
Vdc  
Vdc  
DIMENSIONS  
INCHES  
MIN  
MM  
DIM  
A
B
C
D
E
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
---  
Vdc  
0.1  
0.1  
uAdc  
uAdc  
Vdc  
IEBO  
Emitter Cutoff Current  
(VEB=4.0Vdc, IC=0)  
---  
F
G
H
J
.0005  
.035  
.003  
.015  
VCE(sat)  
Collector-Emitter Saturation Voltage*  
(IC=500mAdc, IB=50mAdc)  
(IC=1Adc, IB=100mAdc)  
Base-Emitter Saturation Voltage*  
(IC=1Adc, IB=100mAdc)  
Base-Emitter Turn On Voltage*  
(VCE=10Vdc, IC=1Adc)  
DC Current Gain  
(VCE=10Vdc, IC=1mAdc)  
(VCE=10Vdc, IC=250mAdc)*  
(VCE=10Vdc, IC=500mAdc)*  
(VCE=10Vdc, IC=1Adc)*  
---  
---  
0.3  
0.6  
.085  
.37  
K
VBE(sat)  
VBE(on)  
hFE  
---  
---  
1.15  
Vdc  
Vdc  
Suggested Solder  
Pad Layout  
1
.031  
.800  
100  
100  
60  
---  
300  
---  
---  
.035  
.900  
20  
---  
.079  
2.000  
fT  
Transition Frequency  
(IC=50mAdc, VCE=10Vdc, f=100MHz)  
Output Capacitance  
(VCB=10Vdc, f=1.0MHz)  
inches  
mm  
150  
---  
---  
MHz  
pF  
Cob  
10  
* Measured under pulsed conditions. Pulse width=300us. Duty cycle2%  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

FMMT493-TP 替代型号

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