Datasheet > FMMT4124

FMMT4124

更新时间： 2024-09-27 14:54:35

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1090K
描述
双极型晶体管

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技术参数
数据手册

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FMMT4124 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	25
Collector Current - Continuous：	0.2	DC current gain - Min：	120
DC current gain - Max：	360	Transition frequency：	300
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

FMMT4124 数据手册

FMMT4124

NPN Silicon Epitaxial Planar Transistor

SOT-23

Dim

Min

2.70

1.10

Max

3.10

1.50

FEATURES

NPN Silicon Planar.

Switching Transistor.

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

1.80

0.02

ORDERING INFORMATION

0.1 Typical

Type No.

Marking

Package Code

SOT-23

2.20

2.60

FMMT4124

All Dimensions in mm

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

0.2

P_C

330

Junction and Storage Temperature

T_j_，T_stg

-55 to +150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

TYP

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=10μA,I_E=0

I_C=1mA,I_B=0

I_E=10μA,I_C=0

V_CB=20V,I_E=0

Emitter cut-off current

I_EBO

V_EB=3V,I_C=0

V_CE=1V,I_C=2mA

V_CE=1V,I_C=50mA

I_C=50mA, I_B= 5mA

120

360

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.3

0.95

V_CE=20V, I_C= 10mA

f=100MHz

Transition frequency

f_T

300

MHz

Output capacitance

Input capacitance

C_obo

C_ibo

V_CB=5V,I_E=0 f=140MHz

_BE=0.5V,I_E=0

f=140MHz

I_C=200μA,

Noise figure

_CE=5V,R_g=2kΩ

Small Signal Current Transfer

Delay Time

h_fe

t_d

t_r

I_C=2mA,V_CE=1V,f=1KHz 120

480

V_CC=3V,V_BE(off)=0.5v

I_C=10mA,I_B1=1mA

Rise Time

Storage Time

Fall Time

t_s

t_f

125

V_CC=3V,

I_C=10mA,I_B1= I_B2=1mA

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mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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