Datasheet > FMMT415

FMMT415

更新时间： 2024-11-14 12:04:55

品牌	Logo	应用领域
TYSEMI		晶体晶体管脉冲光电二极管脉冲发生器
页数	文件大小	规格书
1页	185K
描述
High speed pulse generators, SOT23 NPN Silicon Planar

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中文翻译

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数据手册

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FMMT415 数据手册

SMD Type

Transistors

Product specification

FMMT415

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High speed pulse generators

SOT23 NPN Silicon Planar

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

260

100

Peak collector current

Collector current

I^C

500

Power dissipation

P^tot

330

Operating and storage temperature range

T^j,T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

260

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^C=1mA,Tamb= -55 to +150

I^C=100ìA

I^E=10ìA

0.1

ìA

V^CB=80V

Collector cutoff current

I^CBO

V^CB=80V, Tamb=100

V^EB=4V

Emitter cut-off current

I^EBO

0.1

0.5

0.9

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

V^CE(sat)

V^BE(sat)

I^C=10mA,I^B=1mA

V^C=200V, C^CE=620pF

V^C=250V, C^CE=620pF

I^C=10mA,V^CE=10V

I^C=10mA,V^CE=20V,f=20MHz

V^CB=20V, I^E=0, f=1MHz

Current in second breakdown

I^SB

DC current gain *

h^FE

f^T

Transition frequency

Collector-base capacitance

MHz

C^cb

* Pulse test: tp = 300 ìs; d

0.02.

Marking

415

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4008-318-123

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