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FMMT38A PDF预览

FMMT38A

更新时间: 2024-11-17 12:20:07
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
2页 78K
描述
SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FMMT38A 技术参数

生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.24
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):1000
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.33 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

FMMT38A 数据手册

 浏览型号FMMT38A的Datasheet PDF文件第2页 
FMMT38A /B Not Recommended for  
New Design Please Use FMMT38C  
FMMT38A  
FMMT38B  
FMMT38C  
SOT23 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTORS  
ISSUE 3 – AUGUST 1996  
FEATURES  
*
*
60 Volt VCEO  
Gain of 10K at IC=0.5 Amp  
E
C
PARTMARKING DETAILS –  
FMMT38A – 4J  
FMMT38B – 5J  
FMMT38C – 7J  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
60  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
10  
V
Peak Pulse Current  
800  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
300  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
MAX.  
V
amb  
PARAMETER  
SYMBOL  
MIN.  
UNIT CONDITIONS.  
IC=10 A, IE=0  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
80  
Collector-Emitter  
VCEO(sus) 60  
V(BR)EBO 10  
ICBO  
V
V
IC=10mA, IB=0  
IE=10 A, IC=0  
VCB=60V, IE=0  
VEB=8V, IC=0  
Sustaining Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
nA  
Emitter Cut-Off Current IEBO  
100  
nA  
V
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
1.25  
IC=800mA, IB=8mA*  
Base-Emitter  
Turn-on Voltage  
VBE(on)  
1.8  
V
IC=800mA, VCE=5V*  
Static  
FMMT38A hFE  
500  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
Forward  
Current  
Transfer  
Ratio  
1000  
FMMT38B  
FMMT38C  
2000  
4000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
5000  
10000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 100  

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