5秒后页面跳转
FMMT38C PDF预览

FMMT38C

更新时间: 2024-11-16 22:40:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管达林顿晶体管光电二极管PC局域网
页数 文件大小 规格书
2页 116K
描述
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FMMT38C 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.45Is Samacsys:N
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:1.25 VBase Number Matches:1

FMMT38C 数据手册

 浏览型号FMMT38C的Datasheet PDF文件第2页 
FMMT38A  
FMMT38B  
FMMT38C  
SOT23 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTORS  
ISSUE 3 – AUGUST 1996  
FEATURES  
*
*
60 Volt VCEO  
Gain of 10K at IC=0.5 Amp  
E
C
PARTMARKING DETAILS –  
FMMT38A – 4J  
FMMT38B – 5J  
FMMT38C – 7J  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
60  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
10  
V
Peak Pulse Current  
800  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
300  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
MAX.  
V
amb  
PARAMETER  
SYMBOL  
MIN.  
UNIT CONDITIONS.  
IC=10 A, IE=0  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
80  
Collector-Emitter  
VCEO(sus) 60  
V(BR)EBO 10  
ICBO  
V
V
IC=10mA, IB=0  
IE=10 A, IC=0  
VCB=60V, IE=0  
VEB=8V, IC=0  
Sustaining Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
nA  
Emitter Cut-Off Current IEBO  
100  
nA  
V
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
1.25  
IC=800mA, IB=8mA*  
Base-Emitter  
Turn-on Voltage  
VBE(on)  
1.8  
V
IC=800mA, VCE=5V*  
Static  
FMMT38A hFE  
500  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
Forward  
Current  
Transfer  
Ratio  
1000  
FMMT38B  
FMMT38C  
2000  
4000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
5000  
10000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 100  

与FMMT38C相关器件

型号 品牌 获取价格 描述 数据表
FMMT38CQ DIODES

获取价格

NPN, 60V, 0.3A, SOT23
FMMT38CTA DIODES

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
FMMT38CTC DIODES

获取价格

300mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN
FMMT3903 TYSEMI

获取价格

Switching transistors
FMMT3903 KEXIN

获取价格

Switching Transistors
FMMT3903 ZETEX

获取价格

SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS
FMMT3903TA DIODES

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
FMMT3903TC DIODES

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
FMMT3904 ZETEX

获取价格

SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS
FMMT3904TA DIODES

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,