5秒后页面跳转
FMMT38ATA PDF预览

FMMT38ATA

更新时间: 2024-11-17 13:07:47
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
2页 116K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FMMT38ATA 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.23
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:60 V
配置:DARLINGTON最小直流电流增益 (hFE):1000
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:1.25 V
Base Number Matches:1

FMMT38ATA 数据手册

 浏览型号FMMT38ATA的Datasheet PDF文件第2页 
FMMT38A  
FMMT38B  
FMMT38C  
SOT23 NPN SILICON PLANAR MEDIUM  
POWER DARLINGTON TRANSISTORS  
ISSUE 3 – AUGUST 1996  
FEATURES  
*
*
60 Volt VCEO  
Gain of 10K at IC=0.5 Amp  
E
C
PARTMARKING DETAILS –  
FMMT38A – 4J  
FMMT38B – 5J  
FMMT38C – 7J  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
60  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
10  
V
Peak Pulse Current  
800  
mA  
mA  
mW  
°C  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
300  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
MAX.  
V
amb  
PARAMETER  
SYMBOL  
MIN.  
UNIT CONDITIONS.  
IC=10 A, IE=0  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
80  
Collector-Emitter  
VCEO(sus) 60  
V(BR)EBO 10  
ICBO  
V
V
IC=10mA, IB=0  
IE=10 A, IC=0  
VCB=60V, IE=0  
VEB=8V, IC=0  
Sustaining Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
nA  
Emitter Cut-Off Current IEBO  
100  
nA  
V
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
1.25  
IC=800mA, IB=8mA*  
Base-Emitter  
Turn-on Voltage  
VBE(on)  
1.8  
V
IC=800mA, VCE=5V*  
Static  
FMMT38A hFE  
500  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
Forward  
Current  
Transfer  
Ratio  
1000  
FMMT38B  
FMMT38C  
2000  
4000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
5000  
10000  
IC=100mA, VCE=5V*  
IC=500mA, VCE=5V*  
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 100  

与FMMT38ATA相关器件

型号 品牌 获取价格 描述 数据表
FMMT38ATC DIODES

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
FMMT38B ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
FMMT38B DIODES

获取价格

SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
FMMT38BTA DIODES

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
FMMT38BTC DIODES

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
FMMT38C DIODES

获取价格

SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
FMMT38C ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
FMMT38CQ DIODES

获取价格

NPN, 60V, 0.3A, SOT23
FMMT38CTA DIODES

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
FMMT38CTC DIODES

获取价格

300mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN