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FMB3906_NL PDF预览

FMB3906_NL

更新时间: 2024-01-19 21:32:18
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
6页 77K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSOT-6

FMB3906_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SUPERSOT-6针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.53
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):0.7 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

FMB3906_NL 数据手册

 浏览型号FMB3906_NL的Datasheet PDF文件第2页浏览型号FMB3906_NL的Datasheet PDF文件第3页浏览型号FMB3906_NL的Datasheet PDF文件第4页浏览型号FMB3906_NL的Datasheet PDF文件第5页浏览型号FMB3906_NL的Datasheet PDF文件第6页 
FMB3906  
FFB3906  
MMPQ3906  
E2  
B2  
B4  
C2  
E1  
E4  
B3  
E3  
C1  
B2  
E2  
C1  
B1  
E1  
C4  
C4  
C3  
C2  
B2  
SC70-6  
Mark: .2A  
B1  
E2  
C3  
C2  
pin #1  
E1  
B1  
pin #1  
C2  
C1  
NOTE: The pinouts are symmetrical; pin 1 and pin  
4 are interchangeable. Units inside the carrier can  
be of either orientation and will not affect the  
functionality of the device.  
C1  
pin #1  
SOIC-16  
Mark: MMPQ3906  
SuperSOT -6  
Mark: .2A  
Dot denotes pin #1  
PNP Multi-Chip General Purpose Amplifier  
This device is designed for general purpose amplifier and switching  
applications at collector currents of 10 µA to 100 mA. Sourced  
from Process 66.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
40  
40  
V
V
5.0  
V
4
Collector Current - Continuous  
200  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
FFB3906  
FMB3906  
MMPQ3906  
PD  
RθJA  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Effective 4 Die  
300  
2.4  
415  
700  
5.6  
180  
1,000  
8.0  
mW  
mW/°C  
°C/W  
°C/W  
°C/W  
125  
240  
Each Die  
1998 Fairchild Semiconductor Corporation  

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