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FMB3946 PDF预览

FMB3946

更新时间: 2024-11-13 22:40:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 33K
描述
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package

FMB3946 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SSOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.49
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
认证状态:Not Qualified子类别:BIP General Purpose Small Signals
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):190 ns最大开启时间(吨):38 ns
Base Number Matches:1

FMB3946 数据手册

 浏览型号FMB3946的Datasheet PDF文件第2页 
Discrete Power  
&
Signal Technologies  
FMB3946  
C2  
E1  
C1  
Package: SuperSOT-6  
Device Marking: .002  
Note: The " . " (dot) signifies Pin 1  
B2  
E2  
B1  
Transistor 1 is NPN device,  
transistor 2 is PNP device.  
NPN & PNP Complementary Dual Transistor  
SuperSOT-6 Surface Mount Package  
This complementary dual device was designed for use as a general purpose amplifier and switch. The useful  
dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Process 23  
(NPN) and Process 66 (PNP).  
Absolute Maximum Ratings*  
TA  
= 25°C unless otherwise noted  
Value  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
40  
V
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
40  
V
V
5
200  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ,  
T
stg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics TA  
= 25°C unless otherwise noted  
Symbol  
Characteristics  
Max  
Units  
Total Device Dissipation  
Derate above 25°C  
700  
5.6  
mW  
mW/°C  
PD  
Thermal Resistance, Junction to Ambient  
180  
°C/W  
RqJA  
ã 1997 Fairchild Semiconductor Corporation  
Page 1 of 2  
fmb3946.lwpPr23&66(Y2)  

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