5秒后页面跳转
FMB200 PDF预览

FMB200

更新时间: 2024-01-26 09:37:06
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 53K
描述
PNP Multi-Chip General Purpose Amplifier

FMB200 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:6.44
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.7 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

FMB200 数据手册

 浏览型号FMB200的Datasheet PDF文件第1页浏览型号FMB200的Datasheet PDF文件第3页浏览型号FMB200的Datasheet PDF文件第4页 
PNP Multi-Chip General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Typ Max Units  
OFF CHARACTERISTICS  
BVCBO  
Collector-Base Breakdown Voltage  
60  
45  
V
V
IC = 10 µA, IB = 0  
BVCEO  
Collector-Emitter Breakdown  
Voltage*  
IC = 1.0 mA, IE = 0  
BVEBO  
ICBO  
Emitter-Base Breakdown Voltage  
6.0  
V
IE = 10 µA, IC = 0  
VCB = 50 V, IE = 0  
VCE = 40 V, IE = 10  
VEB = 4.0 V, IC = 0  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
50  
50  
50  
nA  
nA  
nA  
ICES  
IEBO  
ON CHARACTERISTICS  
hFE  
DC Current Gain  
80  
I
C = 100 µA, VCE = 1.0 V  
100  
100  
450  
350  
IC = 10 mA, VCE = 1.0 V  
IC = 150 mA, VCE = 5.0 V*  
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA  
IC = 200 mA, IB = 20 mA*  
0.2  
0.4  
0.85  
1.0  
V
V
V
V
VCE(sat)  
VBE(sat)  
Base-Emitter Saturation Voltage  
IC = 10 mA, IB = 1.0 mA  
IC = 200 mA, IB = 20 mA*  
SMALL SIGNAL CHARACTERISTICS  
fT  
Current Gain - Bandwidth Product  
VCE = 20 V, IC = 20 mA  
VCB = 10 V, f = 1.0 MHz  
300  
4.5  
2.5  
MHz  
pF  
Output Capacitance  
Cobo  
NF  
Noise Figure  
dB  
IC = 100 µA, VCE = 5.0 V,  
RG = 2.0 k, f = 1.0 kHz  
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
Typical Characteristics  
Typical Pulsed Current Gain  
Collector-Emitter Saturation  
Voltage vs Collector Current  
vs Collector Current  
500  
0.3  
0.25  
0.2  
VCE = 5V  
125 °C  
β
= 10  
400  
300  
200  
100  
0
0.15  
0.1  
25 °C  
25 °C  
- 40 °C  
0.05  
125 ºC  
- 40 ºC  
0
0.1  
1
10  
100  
300  
0.01  
0.1  
1
10  
100  
I C - COLLECTOR CURRENT (mA)  
IC - COLLECTOR CURRENT (mA)  

与FMB200相关器件

型号 品牌 描述 获取价格 数据表
FMB200D84Z FAIRCHILD Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO

获取价格

FMB200D87Z FAIRCHILD Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO

获取价格

FMB200L99Z FAIRCHILD Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, SUPERSO

获取价格

FMB20N50E FUJI Power Field-Effect Transistor, 20A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Met

获取价格

FMB20N50ES FUJI T-pack

获取价格

FMB-2204 SANKEN Schottky Barrier Diodes

获取价格