Datasheet > FM18L08

FM18L08

更新时间： 2024-02-01 08:12:45

品牌	Logo	应用领域
其他 - ETC		存储
页数	文件大小	规格书
11页	82K
描述
256Kb 2.7-3.6V Bytewide FRAM Memory

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中文翻译

获取价格

数据手册

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FM18L08 数据手册

Preliminary

FM18L08

256Kb 2.7-3.6V Bytewide FRAM Memory

Features

SRAM & EEPROM Compatible

256K bit Ferroelectric Nonvolatile RAM

JEDEC 32Kx8 SRAM & EEPROM pinout

70 ns access time

130 ns cycle time

Organized as 32,768 x 8 bits

10 year data retention at 85° C

Unlimited read/write cycles

NoDelay™ write

Equal access & cycle time for reads and writes

Advanced high-reliability ferroelectric process

Low Power Operation

2.7V to 3.6V operation

15 mA active current

15 mA standby current

Superior to Battery-backed SRAM

No battery concerns

Monolithic reliability

True surface mount solution, no rework steps

Superior for moisture, shock, and vibration

Resistant to negative voltage undershoots

Industry Standard Configuration

Industrial temperature -40° C to +85° C

28-pin SOP or DIP

Description

Pin Configuration

The FM18L08 is a 256-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or FRAM is

nonvolatile but operates in other respects as a RAM.

It provides data retention for 10 years while

eliminating the reliability concerns, functional

disadvantages and system design complexities of

battery-backed SRAM. Fast-write time and practically

unlimited read/write endurance make it superior to

other types of nonvolatile memory and a good

substitute for ordinary SRAM.

A14

A12

VDD

A13

A11

A10

In-system operation of the FM18L08 is very similar to

other RAM based devices. Memory read- and write-

cycles require equal times. The FRAM memory,

however, is nonvolatile due to its unique ferroelectric

memory process. Unlike BBSRAM, the FM18L08 is a

truly monolithic nonvolatile memory. It provides the

same functional benefits of a fast write without the

serious disadvantages associated with modules and

batteries or hybrid memory solutions.

DQ7

DQ6

DQ5

DQ4

DQ3

DQ0

DQ1

DQ2

VSS

These capabilities make the FM18L08 ideal for

nonvolatile memory applications requiring frequent or

rapid writes in

a bytewide environment. The

Ordering Information

70 ns access, 28-pin SOP

availability of a true surface-mount package improves

the manufacturability of new designs, while the DIP

package facilitates simple design retrofits. The

FM18L08 offers guaranteed operation over an

industrial temperature range of -40°C to +85°C.

FM18L08-70-S

FM18L08-70-P

70 ns access, 28-pin DIP

This data sheet contains specifications for a product under development.

Characterization is not complete; specifications may change without notice.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058

www.ramtron.com

23 March 2001

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中文翻译

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与FM18L08相关器件

型号	品牌	获取价格	描述	数据表
FM18L08_07	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-P	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-PG	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-S	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-SG	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-TG	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18W08	RAMTRON	获取价格	256Kb Wide Voltage Bytewide F-RAM
FM18W08	CYPRESS	获取价格	256Kb Wide Voltage Bytewide F-RAM
FM18W08-SG	RAMTRON	获取价格	256Kb Wide Voltage Bytewide F-RAM
FM18W08-SG	CYPRESS	获取价格	256Kb Wide Voltage Bytewide F-RAM

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