Datasheet > FM18L08_07

FM18L08_07

更新时间： 2024-02-06 19:55:17

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
13页	126K
描述
256Kb Bytewide FRAM Memory

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中文翻译

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数据手册

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FM18L08_07 数据手册

FM18L08

256Kb Bytewide FRAM Memory

Features

SRAM & EEPROM Compatible

•

JEDEC 32Kx8 SRAM & EEPROM pinout

70 ns Access Time

140 ns Cycle Time

256K bit Ferroelectric Nonvolatile RAM

•

Organized as 32,768 x 8 bits

45 year Data Retention

Unlimited Read/Write Cycles

NoDelay™ Writes

Low Power Operation

•

3.0V to 3.65V Operation

15 mA Active Current

15 µA Standby Current

Advanced High-Reliability Ferroelectric Process

Superior to Battery-Backed SRAM

•

No Battery Concerns

Monolithic Reliability

True Surface Mount Solution, No Rework Steps

Superior for Moisture, Shock, and Vibration

Resistant to Negative Voltage Undershoots

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

32-pin “Green” TSOP Package

28-pin SOIC or DIP Package

“Green” Packaging Options

Pin Configurations

Description

The FM18L08 is a 256-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or FRAM is

nonvolatile and reads and writes like a RAM. It

provides data retention for 45 years while eliminating

the reliability concerns, functional disadvantages and

system design complexities of battery-backed SRAM

(BBSRAM). Fast write timing and high write

endurance make FRAM superior to other types of

nonvolatile memory.

A10

A11

DQ7

DQ6

DQ5

DQ4

DQ3

VSS

DQ2

DQ1

DQ0

A13

VDD

A14

A12

TSOP-I

In-system operation of the FM18L08 is very similar

to other RAM based devices. Read cycle and write

cycle times are equal. The FRAM memory, however,

is nonvolatile due to its unique ferroelectric memory

process. Unlike BBSRAM, the FM18L08 is a truly

monolithic nonvolatile memory. It provides the same

functional benefits of a fast write without the

disadvantages associated with modules and batteries

or hybrid memory solutions.

These capabilities make the FM18L08 ideal for

nonvolatile memory applications requiring frequent

or rapid writes in a bytewide environment. The

availability of a surface-mount package improves the

manufacturability of new designs, while the DIP

package facilitates simple design retrofits. Device

specifications are guaranteed over a temperature

range of -40°C to +85°C.

Ordering Information

FM18L08-70-TG

FM18L08-70-S

FM18L08-70-P

FM18L08-70-SG

FM18L08-70-PG

70 ns access, 32-pin “Green” TSOP

70 ns access, 28-pin SOIC

70 ns access, 28-pin DIP

70 ns access, 28-pin “Green” SOIC

70 ns access, 28-pin “Green” DIP

This product conforms to specifications per the terms of the Ramtron

standard warranty. The product has completed Ramtron’s internal

qualification testing and has reached production status.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 3.4

July 2007

1 of 13

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中文翻译

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与FM18L08_07相关器件

型号	品牌	获取价格	描述	数据表
FM18L08-70-P	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-PG	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-S	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-SG	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18L08-70-TG	RAMTRON	获取价格	256Kb Bytewide FRAM Memory
FM18W08	RAMTRON	获取价格	256Kb Wide Voltage Bytewide F-RAM
FM18W08	CYPRESS	获取价格	256Kb Wide Voltage Bytewide F-RAM
FM18W08-SG	RAMTRON	获取价格	256Kb Wide Voltage Bytewide F-RAM
FM18W08-SG	CYPRESS	获取价格	256Kb Wide Voltage Bytewide F-RAM
FM18W08-SG	INFINEON	获取价格	铁电存储器 (F-RAM)

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