Datasheet > FM18W08-SG

FM18W08-SG

更新时间： 2025-10-07 15:18:59

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
18页	319K
描述
铁电存储器 (F-RAM)

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中文翻译

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数据手册

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FM18W08-SG 数据手册

FM18W08

256-Kbit (32 K × 8) Wide Voltage Bytewide

F-RAM Memory

256-Kbit (32

K × 8) Wide Voltage Bytewide F-RAM Memory

■ Industrial temperature: –40 C to +85 C

Features

■ 28-pin small outline integrated circuit (SOIC) package

■ 256-Kbit ferroelectric random access memory (F-RAM)

logically organized as 32 K × 8

■ Restriction of hazardous substances (RoHS) compliant

❐ High-endurance 100 trillion (10¹⁴) read/writes

Functional Description

❐ 151-year data retention (see the Data Retention and

Endurance table)

The FM18W08 is a 32 K × 8 nonvolatile memory that reads and

writes similar to a standard SRAM. A ferroelectric random

access memory or F-RAM is nonvolatile, which means that data

is retained after power is removed. It provides data retention for

over 151 years while eliminating the reliability concerns,

functional disadvantages, and system design complexities of

battery-backed SRAM (BBSRAM). Fast write timing and high

write endurance make the F-RAM superior to other types of

memory.

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ SRAM and EEPROM compatible

❐ Industry-standard 32 K × 8 SRAM and EEPROM pinout

❐ 70-ns access time, 130-ns cycle time

■ Superior to battery-backed SRAM modules

❐ No battery concerns

The FM18W08 operation is similar to that of other RAM devices

and therefore, it can be used as a drop-in replacement for a

standard SRAM in a system. Minimum read and write cycle times

are equal. The F-RAM memory is nonvolatile due to its unique

ferroelectric memory process. These features make the

FM18W08 ideal for nonvolatile memory applications requiring

frequent or rapid writes.

❐ Monolithic reliability

❐ True surface mount solution, no rework steps

❐ Superior for moisture, shock, and vibration

❐ Resistant to negative voltage undershoots

■ Low power consumption

❐ Active current 12 mA (max)

❐ Standby current 20 A (typ)

The device is available in a 28-pin SOIC surface mount package.

Device specifications are guaranteed over the industrial

temperature range –40 °C to +85 °C.

■ Wide voltage operation: V_DD= 2.7 V to 5.5 V

For a complete list of related documentation, click here.

Logic Block Diagram

14-0

32 K x 8

F-RAM Array

Control

Logic

7-0

I/O Latch & Bus Driver

Cypress Semiconductor Corporation

Document Number: 001-86207 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 4, 2015

12 3 4 5 6 7...18

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与FM18W08-SG相关器件

型号	品牌	获取价格	描述	数据表
FM18W08-SGTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM190	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC,
FM190-NFLT-H	FORMOSA	获取价格	STATUS : Active; Package : SOD-323T; IO(A) :
FM190-W	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC,
FM1901-7PAF	BEL	获取价格	DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE
FM1901-7PD0A	BEL	获取价格	DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE
FM1901-7PD0AF	BEL	获取价格	DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE
FM1901-7PD0AH	BEL	获取价格	DC-DC Regulated Power Supply Module, 1 Output, METAL, CASE M02, MODULE
FM1901-7PD1	BEL	获取价格	DC-DC Regulated Power Supply Module, 1 Output, METAL, CASE M02, MODULE
FM1901-7PD1A	BEL	获取价格	DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid, METAL, CASE M02, MODULE

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