Datasheet > 1N60

1N60

更新时间： 2025-10-26 18:06:27

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合科泰 - HOTTECH		/
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描述
TO-252

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1N60 数据手册

1N60 1N65

N-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

R_DS(ON)=11.5Ω@V_GS= 10V.



 Ultra Low gate charge (typical 5.0nC)

 Low reverse transfer capacitance (C_RSS= typical 3.0 pF)



Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-252

MECHANICAL DATA



Case: TO-252

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.33 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

V_DSS

RATINGS

600

UNIT

1N60

1N65

Drain-Source Voltage

Gate-Source Voltage

650

V_GSS

I_AR

±30

Avalanche Current (Note 1)

Continuous Drain Current

Pulsed Drain Current (Note 1)

1.0

I_D

1.0

I_DM

4.8

Single Pulsed (Note 2)

Repetitive (Note 1)

E_AS

E_AR

dv/dt

P_D

V/ns

Avalanche Energy

4.0

Peak Diode Recovery dv/dt (Note 3)

Power Dissipation

4.5

Junction Temperature

Operating Temperature

Storage Temperature

Junction-to-Ambient

Junction-to-Case

T_J

+150

-55 ~ +150

110

℃

T_OPR

T_STG

θ_JA

℃

℃/W

4.53

θ_Jc

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

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