生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-MDFM-F2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.79 | 其他特性: | HIGH RELIABILITY |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 15 V | FET 技术: | JUNCTION |
最高频带: | KU BAND | JESD-30 代码: | R-MDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 1.15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FLK012XP | FUJITSU |
获取价格 |
RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electr | |
FLK017WF | EUDYNA |
获取价格 |
X, Ku Band Power GaAs FET | |
FLK017XP | EUDYNA |
获取价格 |
GaAs FET & HEMT Chips | |
FLK022WG | FUJITSU |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
FLK022XP | FUJITSU |
获取价格 |
RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electr | |
FLK022XV | FUJITSU |
获取价格 |
RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electr | |
FLK027WG | EUDYNA |
获取价格 |
X, Ku Band Power GaAs FET | |
FLK027XP | EUDYNA |
获取价格 |
GaAs FET & HEMT Chips | |
FLK027XV | EUDYNA |
获取价格 |
GaAs FET & HEMT Chips | |
FLK052WG | FUJITSU |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, |