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FLK012WF PDF预览

FLK012WF

更新时间: 2024-01-27 07:46:47
品牌 Logo 应用领域
富士通 - FUJITSU 局域网晶体管
页数 文件大小 规格书
4页 62K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WF, 3 PIN

FLK012WF 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-MDFM-F2
针数:3Reach Compliance Code:unknown
风险等级:5.79其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 VFET 技术:JUNCTION
最高频带:KU BANDJESD-30 代码:R-MDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:1.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLK012WF 数据手册

 浏览型号FLK012WF的Datasheet PDF文件第1页浏览型号FLK012WF的Datasheet PDF文件第2页浏览型号FLK012WF的Datasheet PDF文件第3页 
FLK012WF  
X-Ku Band Power GaAs FETs  
Case Style "WF"  
Metal-Ceramic Hermetic Package  
2.  
2.5  
(0.098)  
2-ø1.6±0.01  
(0.063)  
1
2
0.1±0.05  
(0.004)  
3
0.6  
(0.024)  
8.5±0.2  
(0.335)  
6.1±0.1  
(0.240)  
1: Gate  
2: Source (Flange)  
3: Drain  
Unit: mm (inches)  
Data Sheets  
1998 Microwave Databook  
255  

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