Datasheet > FLK207MH-14

FLK207MH-14

更新时间： 2024-11-21 03:09:19

品牌	Logo	应用领域
EUDYNA		晶体晶体管局域网
页数	文件大小	规格书
4页	93K
描述
X, Ku Band Power GaAs FET

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中文翻译

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数据手册

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FLK207MH-14 数据手册

FLK207MH-14

X, Ku Band Power GaAs FET

FEATURES

• High Output Power: P

= 32.5dBm(Typ.)

1dB

• High Gain: G

= 6.0dB(Typ.)

= 27%(Typ.)

1dB

• High PAE: η

add

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLK207MH-14 is a power GaAs FET that is designed for general

purpose applications in the Ku-Band frequency range as it provides

superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

-5

T = 25°C

Total Power Dissipation

Storage Temperature

Channel Temperature

12.5

-65 to +175

175

°C

stg

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 17.8 and -1.0 mA respectively with

gate resistance of 250Ω.

3. The operating channel temperature (T ) should not exceed 145°C.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limit

Typ.

Item

Symbol

Test Conditions

Unit

Min.

Max.

= 5V, V

= 0V

Saturated Drain Current

Transconductance

800 1200

DSS

= 5V, I

= 500mA

= 40mA

400

Pinch-off Voltage

= 5V, I

-1.0

-5

-2.0 -3.5

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

= -40µA

GSO

31.5 32.5

dBm

1dB

= 10V,

Power Gain at 1dB G.C.P.

Power-added Efficiency

5.0

6.0

= 0.6 I

1dB

DSS (Typ.),

f = 14.5 GHz

add

Thermal Resistance

Channel to Case

°C/W

CASE STYLE: MH

G.C.P.: Gain Compression Point

Edition 1.1

August 1999

12 3 4

中文翻译

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