5秒后页面跳转
FJZ594JB PDF预览

FJZ594JB

更新时间: 2024-11-23 22:08:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管光电二极管放大器
页数 文件大小 规格书
5页 193K
描述
Si N-channel Junction FET

FJZ594JB 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
Is Samacsys:N配置:SINGLE
最大漏极电流 (ID):0.001 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

FJZ594JB 数据手册

 浏览型号FJZ594JB的Datasheet PDF文件第2页浏览型号FJZ594JB的Datasheet PDF文件第3页浏览型号FJZ594JB的Datasheet PDF文件第4页浏览型号FJZ594JB的Datasheet PDF文件第5页 
FJZ594J  
Capacitor Microphone Applications  
Especially Suited for use in Audio, Telephone Capacitor Microphones  
Excellent Voltage Characteristic  
3
Excellent Transient Characteristic  
2
1
SOT-623F  
1. Drain 2. Source 3. Gate  
Si N-channel Junction FET  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-20  
10  
1
100  
150  
Units  
V
Gate-Drain Voltage  
Gate Current  
Drain Current  
V
GDO  
I
I
mA  
mA  
mW  
°C  
G
D
P
Power Dissipation  
Junction Temperature  
Storage Temperature  
D
J
T
T
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
BV  
Parameter  
Gate-Drain Breakdown Voltage  
Gate-Source Cut-off Voltage  
Drain Current  
Test Condition  
I = -100uA  
Min.  
Typ.  
Max.  
Units  
V
V
µA  
mS  
pF  
pF  
-20  
GDO  
G
V
(off)  
V
=5V, I =1µA  
-0.6  
-1.5  
350  
GS  
DS  
DS  
DS  
DS  
DS  
D
I
V
V
V
V
=5V, V =0  
150  
0.4  
DSS  
GS  
ly l  
C
C
Forward Transfer Admittance  
Input Capacitance  
Output Capacitance  
=5V, V =0, f=1MHz  
1.2  
3.5  
0.65  
fs  
GS  
=5V, V =0, f=1MHz  
ISS  
GS  
=5V, V =0, f=1MHz  
RSS  
GS  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Max  
1250  
Units  
°C/W  
R
Thermal Resistance, Junction to Ambient  
θjA  
I
Classification  
DSS  
Classification  
(µA)  
B
C
I
150 ~ 240  
210 ~ 350  
DSS  
Marking  
J1B  
I
grade  
dss  
©2003 Fairchild Semiconductor Corporation  
Rev. D, July 2003  

与FJZ594JB相关器件

型号 品牌 获取价格 描述 数据表
FJZ594JBTF FAIRCHILD

获取价格

Transistor
FJZ594JC FAIRCHILD

获取价格

Si N-channel Junction FET
FJZ594JCTF FAIRCHILD

获取价格

Transistor
FJZ594JTF FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction
FJZ733 FAIRCHILD

获取价格

Low Frequency Amplifier
FJZ733G FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-62
FJZ733L FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-62
FJZ733LTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
FJZ733O FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-62
FJZ733R FAIRCHILD

获取价格

暂无描述