FJZ733R

更新时间： 2024-02-13 20:57:54

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
5页	209K
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中文翻译

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数据手册

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FJZ733R 数据手册

FJZ733

Low Frequency Amplifier

•

Collector-Base Voltage : V

Complement to FJZ945

= -60V

CBO

SOT-623F

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

-60

-50

-5

-150

100

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

-60

-50

- 5

Typ.

Max.

Units

I = -100µA, I =0

CBO

CEO

EBO

I = -10mA. I =0

= -10µA. I =0

= --60V, I =0

-100

700

CBO

= -5V, I =0

EBO

DC Current Gain

= -6V, I = -1mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -100mA, I = -10mA

-0.18

-0.62

180

2.8

-0.3

-0.80

MHz

= -6V, I = -1mA

-0.50

= -6V, I = -10mA

= -10V, I = 0, f=1MHz

Noise Figure

= -6V, I = -0.3mA

6.0

f=1MHz, Rs=10kΩ

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

1250

Units

°C/W

Thermal Resistance, Junction to Ambient

θJA

Classification & Marking

Classification

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

350 ~ 700

Marking

Rev. B1, July 2003

12 3 4 5

中文翻译

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