5秒后页面跳转
FJZ733L PDF预览

FJZ733L

更新时间: 2024-02-02 15:32:54
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
5页 204K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-623F, 3 PIN

FJZ733L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.91最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):350JESD-30 代码:R-PDSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

FJZ733L 数据手册

 浏览型号FJZ733L的Datasheet PDF文件第2页浏览型号FJZ733L的Datasheet PDF文件第3页浏览型号FJZ733L的Datasheet PDF文件第4页浏览型号FJZ733L的Datasheet PDF文件第5页 
FJZ733  
Low Frequency Amplifier  
3
Collector-Base Voltage : V  
Complement to FJZ945  
= -60V  
CBO  
2
1
SOT-623F  
1. Base 2. Emitter 3. Collector  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-60  
-50  
-5  
-150  
100  
Units  
V
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
CEO  
EBO  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
-55 ~ 150  
J
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
-60  
-50  
- 5  
Typ.  
Max.  
Units  
V
V
V
nA  
nA  
BV  
BV  
BV  
I = -100µA, I =0  
CBO  
CEO  
EBO  
C
E
I = -10mA. I =0  
C
E
B
I
= -10µA. I =0  
C
I
I
h
V
V
V
= --60V, I =0  
-100  
-100  
700  
CBO  
EBO  
CB  
EB  
CE  
E
= -5V, I =0  
C
DC Current Gain  
= -6V, I = -1mA  
40  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -100mA, I = -10mA  
-0.18  
-0.62  
180  
2.8  
-0.3  
-0.80  
V
V
MHz  
pF  
CE  
BE  
C
B
V
= -6V, I = -1mA  
-0.50  
50  
CE  
CE  
CB  
CE  
C
f
V
V
V
= -6V, I = -10mA  
T
C
C
NF  
= -10V, I = 0, f=1MHz  
ob  
E
Noise Figure  
= -6V, I = -0.3mA  
6.0  
dB  
C
f=1MHz, Rs=10kΩ  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Max.  
1250  
Units  
°C/W  
R
Thermal Resistance, Junction to Ambient  
θJA  
h
Classification & Marking  
FE  
Classification  
R
40 ~ 80  
A2  
O
70 ~ 140  
A3  
Y
120 ~ 240  
A1  
G
L
h
200 ~ 400  
A4  
350 ~ 700  
A5  
FE  
Marking  
Marking  
A1  
©2003 Fairchild Semiconductor Corporation  
Rev. B1, July 2003  

与FJZ733L相关器件

型号 品牌 获取价格 描述 数据表
FJZ733LTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
FJZ733O FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-62
FJZ733R FAIRCHILD

获取价格

暂无描述
FJZ733Y FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-62
FJZ945 FAIRCHILD

获取价格

Audio Frequency Amplifier & High Frequency OSC.
FJZ945GTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
FJZ945L FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-62
FJZ945LTF FAIRCHILD

获取价格

暂无描述
FJZ945O FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-62
FJZ945OTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon