Datasheet > FJY3010R

FJY3010R

更新时间： 2024-01-15 00:16:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	285K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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FJY3010R 数据手册

November 2006

FJY3010R

NPN Epitaxial Silicon Transistor

Features

•

Switching circuit, Inverter, Interface circuit, Driver Circuit

Built in bias Resistor (R=10KΩ)

Complement to FJY4010R

Eqivalent Circuit

S10

SOT - 523F

Absolute Maximum Ratings *

T = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

-55~150

150

200

°C

T_STG

T_J

Storage Temperature Range

Junction Temperature

°C

Collector Power Dissipation, by R_θJA

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics* T =25°C unless otherwise noted

Symbol

Parameter

Max

Units

R_θJA

Thermal Resistance, Junction to Ambient

600

°C/W

* Minimum land pad size.

Electrical Characteristics*

T = 25°C unless otherwise noted

Symbol

V(BR)CBO

V(BR)CEO

ICBO

Parameter

Test Condition

MIN

Typ MAX

Units

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Collector-Cutoff Current

IC = 100 uA, IE = 0

IC = 1mA, IB = 0

VCB = 30 V, IE = 0

0.1

hFE

DC Current Gain

VCE = 5 V, IC = 1 mA

IC = 10 mA, IB = 1 mA

VCE = 10V, IC = 5 mA

VCB = 10 V, IE = 0, f = 1.0 MHz

100

600

VCE(sat)

Collector-Emitter Saturation Voltage

Current Gain - Bandwidth Product

Output Capacitance

0.3

250

3.7

MHz

Ccb

Input Resistor

KΩ

* Pulse Test: PW≤300µs, Duty Cycle≤2%

FJY3010R Rev. A

www.fairchildsemi.com

12 3 4

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